256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers von Kang, Dongku, Jeong, Woopyo, Kim, Chulbum, Kim, Doo-Hyun, Cho, Yong Sung, Kang, Kyung-Tae, Ryu, Jinho, Kang, Kyung-Min, Lee, SungYeon, Kim, Wandong, Lee, Hanjun, Yu, Jaedoeg, Choi, Nayoung, Jang, Dong-Su, Lee, Cheon An, Min, Young-Sun, Kim, Moo-Sung, Park, An-Soo, Son, Jae-Ick, Kim, In-Mo, Kwak, Pansuk, Jung, Bong-Kil, Lee, Doo-Sub, Kim, Hyunggon, Ihm, Jeong-Don, Byeon, Dae-Seok, Lee, Jin-Yup, Park, Ki-Tae, Kyung, Kye-Hyun

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Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures von Kwon, Dae Woong, Kim, Hyun Woo, Kim, Jang Hyun, Park, Euyhwan, Lee, Junil, Kim, Wandong, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook

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Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray von KIM, Yoon, YUN, Jang-Gn, PARK, Byung-Gook, PARK, Se Hwan, KIM, Wandong, JOO YUN SEO, KANG, Myounggon, RYOO, Kyung-Chang, OH, Jeong-Hoon, LEE, Jong-Ho, SHIN, Hyungcheol

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Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation von Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Baek, Myung-Hyun, Park, Ji-Ho, Choi, Eunseok, Cho, Gyu Seong, Park, Sung-Kye, Lee, Jong-Ho, Park, Byung-Gook

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Analysis on Trapping Kinetics of Stress-Induced Trapped Holes in Gate Dielectric of Amorphous HfInZnO TFT von Kwon, Dae Woong, Kim, Jang Hyun, Kim, Wandong, Kim, Sang Wan, Lee, Jong-Ho, Park, Byung-Gook

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Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory von Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Baek, Myung Hyun, Park, Ji-Ho, Choi, Eunseok, Cho, Gyu Seong, Park, Sung-Kye, Park, Byung-Gook

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Novel Program Method of String Select Transistors for Layer Selection in Channel-Stacked NAND Flash Memory von Kwon, Dae Woong, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Seo, Joo Yun, Choi, Eunseok, Cho, Gyu Seog, Park, Sung-Kye, Lee, Jong-Ho, Park, Byung-Gook

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Light Effect on Negative Bias-Induced Instability of HfInZnO Amorphous Oxide Thin-Film Transistor von Kwon, Dae Woong, Kim, Jang Hyun, Chang, Ji Soo, Kim, Sang Wan, Kim, Wandong, Park, Jae Chul, Kim, Chang Jung, Park, Byung-Gook

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Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor von Kwon, Dae Woong, Seo, Joo Yun, Park, Se Hwan, Kim, Wandong, Kim, Do-Bin, Lee, Sang-Ho, Cho, Gyu Seong, Park, Sung-Kye, Park, Byung-Gook

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Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory von Lee, Sang-Ho, Kim, Wandong, Kwon, Dae Woong, Seo, Joo Yun, Baek, Myung Hyun, Lee, Sungbok, Kang, Jinkyu, Jang, Woojae, Lee, Jong-Ho, Park, Byung-Gook

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Temperature effect on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor von Kwon, Dae Woong, Kim, Jang Hyun, Chang, Ji Soo, Kim, Sang Wan, Kim, Wandong, Park, Jae Chul, Song, Ihun, Kim, Chang Jung, Jung, U In, Park, Byung-Gook

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Vertical-Channel STacked ARray (VCSTAR) for 3D NAND flash memory von Park, Se Hwan, Kim, Yoon, Kim, Wandong, Seo, Joo Yun, Park, Byung-Gook

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Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory von Kim, Wandong, Kim, Yoon, Park, Se Hwan, Seo, Joo Yun, Kim, Do Bin, Park, Byung-Gook

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Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes von Park, Euyhwan, Kim, Garam, Kim, Wandong, Kim, Janghyun, Kang, Donghoon, Son, Joong-Kon, Park, Byung-Gook

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Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance von KIM, Wandong, JUNG HOON LEE, LEE, Jong-Ho, SHIN, Hyungcheol, PARK, Byung-Gook, YUN, Jang-Gn, CHO, Seongjae, LI, Dong-Hua, KIM, Yoon, KIM, Doo-Hyun, GIL SUNG LEE, PARK, Se-Hwan, WON BO SHIM

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Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory von SHIM, Won Bo, CHO, Seongjae, PARK, Byung-Gook, LEE, Jung Hoon, LI, Dong Hua, KIM, Doo-Hyun, LEE, Gil Sung, KIM, Yoon, PARK, Se Hwan, KIM, Wandong, CHOI, Jungdal

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Variation of Threshold Voltage and ON-Cell Current Caused by Cell Gate Length Fluctuation in Virtual Source/Drain NAND Flash Memory von Kim, Wandong, Kim, Yoon, Park, Se Hwan, Seo, Joo Yun, Kim, Do Bin, Park, Byung-Gook

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Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer) von PARK, Se Hwan, KIM, Yoon, KIM, Wandong, SEO, Joo Yun, KIM, Hyungjin, PARK, Byung-Gook

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A Vertical 4-Bit SONOS Flash Memory and a Unique 3-D Vertical nor Array Structure von Kim, Yoon, Park, Il Han, Cho, Seongjae, Yun, Jang-Gn, Lee, Jung Hoon, Kim, Doo-Hyun, Lee, Gil Sung, Park, Se-Hwan, Lee, Dong Hua, Sim, Won Bo, Kim, Wandong, Shin, Hyungcheol, Lee, Jong-Duk, Park, Byung-Gook

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Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory von Kim, Wandong, Kwon, Dae Woong, Ji, Jung Hwan, Lee, Jung Hoon, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook

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