High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform von Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia

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Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange von Loke Wan Khai, Tan Kian Hua, Li Daosheng, Wicaksono, Satrio, Yoon Soon Fatt

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Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth von Dong, Yuan, Wang, Wei, Xu, Shengqiang, Lei, Dian, Gong, Xiao, Guo, Xin, Wang, Hong, Lee, Shuh-Ying, Loke, Wan-Khai, Yoon, Soon-Fatt, Yeo, Yee-Chia

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High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers von Khai, Loke Wan, Yue, Wang, Kwang Hong, Lee, Zhihong, Liu, Hanlin, Xie, Siau Ben, Chiah, Eng Kian, Kenneth Lee, Xing, Zhou, Tan, Chuan Seng, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon

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Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range von Wang, Wei, Dong, Yuan, Lee, Shuh-Ying, Loke, Wan-Khai, Lei, Dian, Yoon, Soon-Fatt, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

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Growth of droplet-free InSbBi on GaAs substrate von Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt

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Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate von Wan Khai, Loke, Yue, Wang, Hanlin, Xie, Hui Teng, Tan, Shuyu, Bao, Kwang Hong, Lee, Lina, Khaw, Lee Eng Kian, Kenneth, Chuan Seng, Tan, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon

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Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array von Jia, Bo Wen, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt

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Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers von Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt

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Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations von Wen Jia, Bo, Hua Tan, Kian, Khai Loke, Wan, Wicaksono, Satrio, Fatt Yoon, Soon

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Room Temperature 3.5- \mu \text Mid-Infrared InAs Photovoltaic Detector on a Si Substrate von Loke Wan Khai, Tan Kian Hua, Li Daosheng, Wicaksono, Satrio, Yoon Soon Fatt

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Dry Etched Waveguide Laser Diode on GeOI von Shuh-Ying Lee, Kian Hua Tan, Wan Khai Loke, Wicaksono, S., Daosheng Li, Harper, Robert, Soon-Fatt Yoon

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Strain-relaxed buffer technology based on metamorphic InxAl1-xAs von Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt, Wang, Wei, Zhou, Qian, Yeo, Yee-Chia

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In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations von Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Ben Chiah, Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene

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Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy von Khee Ng, Tien, Fatt Yoon, Soon, Khai Loke, Wan, Wicaksono, Satrio

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1.55- \mu m GaNAsSb-Based Photoconductive Switch for Microwave Switching von Kian Hua Tan, Tripon-Canseliet, Charlotte, Faci, Salim, Pagies, Antoine, Zegaoui, Malek, Wan Khai Loke, Wicaksono, Satrio, Soon Fatt Yoon, Magnin, Vincent, Decoster, Didier, Chazelas, Jean

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N-Channel InGaAs Field-Effect Transistors formed on Germanium-on-Insulator Substrates von Ivana, Subramanian, Sujith, Owen, Man Hon Samuel, Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia

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Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate von Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt

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Semi-empirical growth model of InSbBi grown by molecular beam epitaxy von Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt

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Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy von Loke, Wan Khai, Tan, Kian Hua, Wicaksono, Satrio, Yoon, Soon Fatt

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