Semiconductor amplifiers and lasers with tapered gain regions von WALPOLE, J. N

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Slab-coupled 1.3-μm semiconductor laser with single-spatial large-diameter mode von Walpole, J.N., Donnelly, J.P., Taylor, P.J., Missaggia, L.J., Harris, C.T., Bailey, R.J., Napoleone, A., Groves, S.H., Chinn, S.R., Huang, R., Plant, J.

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High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier von WALPOLE, J. N, KINTZER, E. S, CHINN, S. R, WANG, C. A, MISSAGGIA, L. J

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High-power, strained-layer amplifiers and lasers with tapered gain regions von Kintzer, E.S., Walpole, J.N., Chinn, S.R., Wang, C.A., Missaggia, L.J.

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Single frequency 1550-nm AlGaInAs-InP tapered high-power laser with a distributed Bragg reflector von Selmic, S.R., Evans, G.A., Chou, T.M., Kirk, J.B., Walpole, J.N., Donnelly, J.P., Harris, C.T., Missaggia, L.J.

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1.5-μm tapered-gain-region lasers with high-CW output powers von Donnelly, J.P., Walpole, J.N., Groves, S.H., Bailey, R.J., Missaggia, L.J., Napoleone, A., Reeder, R.E., Cook, C.C.

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AlGaAs-InGaAs slab-coupled optical waveguide lasers von Donnelly, J.P., Huang, R.K., Walpole, J.N., Missaggia, L.J., Harris, C.T., Plant, J.J., Bailey, R.J., Mull, D.E., Goodhue, W.D., Turner, G.W.

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Microchannel heat sinks for two-dimensional high-power-density diode laser arrays von Missaggia, L.J., Walpole, J.N., Liau, Z.L., Phillips, R.J.

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Gaussian patterned contacts for improved beam stability of 1.55-μm tapered lasers von Walpole, J.N., Donnelly, J.P., Missaggia, L.J., Liau, Z.L., Chinn, S.R., Groves, S.H., Taylor, P.J., Wright, M.W.

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Light scattering in high-dislocation-density GaN von Liau, Z. L., Aggarwal, R. L., Maki, P. A., Molnar, R. J., Walpole, J. N., Williamson, R. C., Melngailis, I.

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High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 μm von Walpole, J.N., Choi, H.K., Missaggia, L.G., Liau, Z.L., Connors, M.K., Turner, G.W., Manfra, M.J., Cook, C.C.

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Simple compact diode-laser/microlens packaging von Liau, Z.L., Tsang, D.Z., Walpole, J.N.

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Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure von LIAU, Z. L, PALMATEER, S. C, GROVES, S. H, WALPOLE, J. N, MISSAGGIA, L. J

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AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy von Wang, C. A., Walpole, J. N., Missaggia, L. J., Donnelly, J. P., Choi, H. K.

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Large monolithic two-dimensional arrays of GaInAsP/InP surface-emitting lasers von LIAU, Z. L, WALPOLE, J. N

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Single-mode optical fiber coupling of high-power tapered gain region devices von Livas, J.C., Chinn, S.R., Kintzer, E.S., Walpole, J.N., Wang, C.A., Missaggia, L.J.

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Gallium phosphide microlenses by mass transport von IAU, Z. L, DIADIUK, V, WALPOLE, J. N, MULL, D. E

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External-cavity coherent operation of InGaAsP buried-heterostructure laser array von DIADIUK, V, LIAU, Z. L, WALPOLE, J. N, CAUNT, J. W, WILLIAMSON, R. C

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CW operation of monolithic arrays of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers von Donnelly, J.P., Goodhue, W.D., Wang, C.A., Bailey, R.J., Lincoln, G.A., Johnson, G.D., Missaggia, L.J., Walpole, J.N.

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Semiconductor-doped-silica saturable-absorber films for solid-state laser mode locking von Bilinsky, I P, Fujimoto, J G, Walpole, J N, Missaggia, L J

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