Monolayer to Bulk Properties of Hexagonal Boron Nitride von Wickramaratne, Darshana, Weston, Leigh, Van de Walle, Chris G

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Minimizing hydrogen vacancies to enable highly efficient hybrid perovskites von Zhang, Xie, Shen, Jimmy-Xuan, Turiansky, Mark E., Van de Walle, Chris G.

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Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes von Kioupakis, Emmanouil, Yan, Qimin, Van de Walle, Chris G.

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Tutorial: Defects in semiconductors—Combining experiment and theory von Alkauskas, Audrius, McCluskey, Matthew D., Van de Walle, Chris G.

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Correctly Assessing Defect Tolerance in Halide Perovskites von Zhang, Xie, Turiansky, Mark E, Van de Walle, Chris G

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Structural and electronic properties of Ga2O3-Al2O3 alloys von Peelaers, Hartwin, Varley, Joel B., Speck, James S., Van de Walle, Chris G.

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Effects of carbon on the electrical and optical properties of InN, GaN, and AlN von Lyons, J. L., Janotti, A., Van de Walle, C. G.

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Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices von Kioupakis, Emmanouil, Yan, Qimin, Steiauf, Daniel, Van de Walle, Chris G

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Universal alignment of hydrogen levels in semiconductors, insulators and solutions von Van de Walle, Chris G, Neugebauer, J

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Spinning up quantum defects in 2D materials von Turiansky, M. E., Alkauskas, A., Van de Walle, C. G.

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Shallow versus deep nature of Mg acceptors in nitride semiconductors von Lyons, John L, Janotti, Anderson, Van de Walle, Chris G

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First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres von Alkauskas, Audrius, Buckley, Bob B, Awschalom, David D, Van de Walle, Chris G

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Hydrogen multicentre bonds von Janotti, Anderson, Van de Walle, Chris G

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Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain von Mansir, J, Conti, P, Zeng, Z, Pla, J J, Bertet, P, Swift, M W, Van de Walle, C G, Thewalt, M L W, Sklenard, B, Niquet, Y M, Morton, J J L

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Piezoelectric effect and polarization switching in Al1−xScxN von Wang, Haochen, Adamski, Nicholas, Mu, Sai, Van de Walle, Chris G.

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Native point defects and impurities in hexagonal boron nitride von Weston, L., Wickramaratne, D., Mackoit, M., Alkauskas, A., Van de Walle, C. G.

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Quantum computing with defects von Weber, J.R, Koehl, W.F, Varley, J.B, Janotti, A, Buckley, B.B, Van de Walle, C.G, Awschalom, D.D

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Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN von Moses, Poul Georg, Miao, Maosheng, Yan, Qimin, Van de Walle, Chris G.

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Electrostatic interactions between charged defects in supercells von Freysoldt, Christoph, Neugebauer, Jörg, Van de Walle, Chris G.

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Sub-band-gap absorption in Ga2O3 von Peelaers, Hartwin, Van de Walle, Chris G.

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