Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs von Walke, Amey M., Verhulst, Anne S., Vandooren, Anne, Verreck, Devin, Simoen, Eddy, Rao, Valipe Ramgopal, Groeseneken, Guido, Collaert, Nadine, Thean, Aaron V. Y.

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Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal-Ferroelectric-Metal Capacitors von Walke, Amey M., Popovici, Mihaela I., Banerjee, Kaustuv, Clima, Sergiu, Kumbhare, Pankaj, Desmet, Johan, Meersschaut, Johan, Bosch, Geert Van den, Delhougne, Romain, Kar, Gouri Sankar, Houdt, Jan Van

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Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using and Anneals von Vandooren, Anne, Walke, Amey M., Verhulst, Anne S., Rooyackers, Rita, Collaert, Nadine, Thean, Aaron V. Y.

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A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs von Chen, Zhuo, Ronchi, Nicolo, Tang, Hongwei, Walke, Amey M., Izmailov, Roman, Ioana Popovici, Mihaela, Van den Bosch, Geert, Rosmeulen, Maarten, Afanas'ev, Valeri V., Van Houdt, Jan

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Fabrication and Analysis of a / Heterojunction Line Tunnel FET von Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kuo-Hsing Kao, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K., Heyns, Marc M., Collaert, Nadine, Thean, Aaron Voon-Yew

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High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition von Popovici, Mihaela Ioana, Walke, Amey M, Bizindavyi, Jasper, Meersschaut, Johan, Banerjee, Kaustuv, Potoms, Goedele, Katcko, Kostantine, Van den Bosch, Geert, Delhougne, Romain, Kar, Gouri Sankar, Van Houdt, Jan

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Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements von Walke, Amey M., Vandooren, Anne, Kaczer, Ben, Verhulst, Anne S., Rooyackers, Rita, Simoen, Eddy, Heyns, Marc M., Rao, V. Ramgopal, Groeseneken, Guido, Collaert, Nadine, Thean, Aaron Voon-Yew

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Effects of Small Geometries on the Performance of Gate First High- \kappa Metal Gate NMOS Transistors von Walke, A. M., Mohapatra, N. R.

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A Simulation Study on Process Sensitivity of a Line Tunnel Field-Effect Transistor von Walke, A. M., Vandenberghe, W. G., Kao, K., Vandooren, A., Groeseneken, G.

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La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications von Walke, Amey M., Popovici, Mihaela I., Sharifi, Shamin H., Demir, Eyup C., Puliyalil, Harinarayanan, Bizindavyi, Jasper, Yasin, Farrukh, Clima, Sergiu, Fantini, Andrea, Belmonte, Attilio, Kar, Gouri S., Houdt, Jan V.

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Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Meal-Ferroelectric-Metal Capacitors von Walke, Amey M, Popovici, Mihaela I, Banerjee, Kaustuv, Clima, Sergiu, Kumbhare, Pankaj, Desmet, Johan, Meersschaut, Johan, Van den Bosch, Geert, Delhougne, Romain, Kar, Gouri Sankar, Van Houdt, Jan

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10¹²) for FeRAM Applications von Walke, Amey M, Popovici, Mihaela I, Sharifi, Shamin H, Demir, Eyup C, Harinarayanan Puliyalil, Bizindavyi, Jasper, Yasin, Farrukh, Clima, Sergiu, Fantini, Andrea, Belmonte, Attilio, Kar, Gouri S, Houdt, Jan V

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Ferroelectric La‐Doped ZrO2/HfxZr1−xO2 Bilayer Stacks with Enhanced Endurance von Popovici, Mihaela, Walke, Amey M., Banerjee, Kaustuv, Ronchi, Nicolo, Meersschaut, Johan, Celano, Umberto, McMitchell, Sean, Spampinato, Valentina, Franquet, Alexis, Favia, Paola, Swerts, Johan, Van den Bosch, Geert, Van Houdt, Jan

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Effects of Small Geometries on the Performance of Gate First High- [Formula Omitted] Metal Gate NMOS Transistors von Walke, Amey M, Mohapatra, Nihar R

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Rapid Research Letters von Popovici, Mihaela, Walke, Amey M, Banerjee, Kaustuv, Ronchi, Nicolo, Meersschaut, Johan, Celano, Umberto, McMitchell, Sean, Spampinato, Valentina, Franquet, Alexis, Favia, Paola, Swerts, Johan, Van den Bosch, Geert, Jan Van Houdt

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Ferroelectric La‐Doped ZrO 2 /Hf x Zr 1− x O 2 Bilayer Stacks with Enhanced Endurance von Popovici, Mihaela, Walke, Amey M., Banerjee, Kaustuv, Ronchi, Nicolo, Meersschaut, Johan, Celano, Umberto, McMitchell, Sean, Spampinato, Valentina, Franquet, Alexis, Favia, Paola, Swerts, Johan, Van den Bosch, Geert, Van Houdt, Jan

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Ferroelectric La-Doped ZrO2/HfxZr1-xO2 Bilayer Stacks with Enhanced Endurance von Popovici, Mihaela, Walke, Amey M, Banerjee, Kaustuv, Ronchi, Nicolo, Meersschaut, Johan, Celano, Umberto, McMitchell, Sean, Spampinato, Valentina, Franquet, Alexis, Favia, Paola, Swerts, Johan, Van den Bosch, Geert, Van Houdt, Jan

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Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride von McMitchell, Sean R. C., Walke, Amey M., Banerjee, Kaustuv, Mertens, Sofie, Piao, Xiaoyu, Mao, Ming, Katcko, Kostantine, Vellianitis, Georgios, Van Dal, Mark, Lin, Yu-Ming, Van den Bosch, Geert, Delhougne, Romain, Kar, Gouri S.

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Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using rm H 2 and rm D 2 Anneals von Vandooren, Anne, Walke, Amey M, Verhulst, Anne S, Rooyackers, Rita, Collaert, Nadine, Thean, Aaron VY

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Fabrication and Analysis of a rm Si / rm Si 0.55 rm Ge 0.45 Heterojunction Line Tunnel FET von Walke, Amey M, Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S, Kao, Kuo-Hsing, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K, Heyns, Marc M, Collaert, Nadine, Thean, Aaron Voon-Yew

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