Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement von Waldrop, J.R., Wang, K.C., Asbeck, P.M.

Volltext

Nucleation of chromate conversion coating on aluminum 2024-T3 investigated by atomic force microscopy von WALDROP, J. R, KENDIG, M. W

Volltext

Thermal grooving at the interface between alumina and monazite von Marshall, D.B, Waldrop, J.R, Morgan, P.E.D

Volltext

Enhanced thermal management by direct water spray of high-voltage, high power devices in a three-phase, 18-hp AC motor drive demonstration von Shaw, M.C., Waldrop, J.R., Chandrasekaran, S., Kagalwala, B., Jing, X., Brown, E.R., Dhir, V.J., Fabbeo, M.

Volltext

Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current von Waldrop, J.R., Chang, M.F.

Volltext

Interface chemistry of metal-GaAs Schottky-barrier contacts von Waldrop, J R, Grant, R W

Volltext

Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions von Waldrop, J.R., Kraut, E.A., Kowalczyk, S.P., Grant, R.W.

Volltext

Heterojunction band discontinuities for GaAs grown on Ge(110): Time variation von Grant, R.W., Waldrop, J.R., Kowalczyk, S.P., Kraut, E.A.

Volltext

Grain boundary resistance measurements in polycrystalline GaAs von Cohen, M.J., Harris, J.S., Waldrop, J.R.

Volltext

Heterojunction band discontinuities for GaAs grown on Ge(110): Time variation von Grant, R.W., Waldrop, J.R., Kowalczyk, S.P., Kraut, E.A.

Volltext

Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions von Waldrop, J.R., Kraut, E.A., Kowalczyk, S.P., Grant, R.W.

Volltext