Schottky barrier height of metal contacts to p -type alpha 6H-SiC von Waldrop, J. R.

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Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC : crystal face dependence von WALDROP, J. R, GRANT, R. W

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Metal Schottky barrier contacts to alpha 6H:SiC von WALDROP, J. R, GRANT, R. W, WANG, Y. C, DAVIS, R. F

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Nucleation of chromate conversion coating on aluminum 2024-T3 investigated by atomic force microscopy von WALDROP, J. R, KENDIG, M. W

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Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy von Waldrop, J. R., Grant, R. W.

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Schottky-barrier height of ideal metal contacts to GaAs von WALDROP, J. R

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Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials von Kraut, E. A., Grant, R. W., Waldrop, J. R., Kowalczyk, S. P.

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Formation and Schottky barrier height of metal contacts to β-SiC von WALDROP, J. R, GRANT, R. W

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Direct variation of metal-GaAs Schottky barrier height by the influence of interface S, Se, and Te von WALDROP, J. R

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Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current von Waldrop, J.R., Chang, M.F.

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Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy von WALDROP, J. R, GRANT, R. W, KRAUT, E. A

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Interface chemistry of metal-GaAs Schottky-barrier contacts von Waldrop, J R, Grant, R W

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Interface chemistry and electrical properties of tungsten Schottky-barrier contacts to GaAs von Waldrop, J. R.

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Thermal grooving at the interface between alumina and monazite von Marshall, D.B, Waldrop, J.R, Morgan, P.E.D

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Correlation of interface composition and barrier height for model AuGeNi contacts to GaAs von WALDROP, J. R, GRANT, R. W

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Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement von Waldrop, J.R., Wang, K.C., Asbeck, P.M.

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Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy von Waldrop, J. R., Kraut, E. A., Farley, C. W., Grant, R. W.

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Semiconductor core-level to valence-band maximum binding-energy differences: precise determination by X-ray photoelectron spectroscopy von KRAUT, E. A, GRANT, R. W, WALDROP, J. R, KOWALCZYK, S. P

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Metal contacts to p-type GaAs with large Schottky barrier heights von WALDROP, J. R

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Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs von Grant, R. W., Waldrop, J. R., Kraut, E. A.

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