First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes von Sasaki, Kohei, Wakimoto, Daiki, Quang Tu Thieu, Koishikawa, Yuki, Kuramata, Akito, Higashiwaki, Masataka, Yamakoshi, Shigenobu

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X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias von Yao, Yongzhao, Wakimoto, Daiki, Miyamoto, Hironobu, Sasaki, Kohei, Kuramata, Akito, Hirano, Keiichi, Sugawara, Yoshihiro, Ishikawa, Yukari

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Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy von Sasaki, Kohei, Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Kuramata, Akito, Yamakoshi, Shigenobu

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Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−1 von Wakimoto, Daiki, Lin, Chia-Hung, Thieu, Quang Tu, Miyamoto, Hironobu, Sasaki, Kohei, Kuramata, Akito

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Nitrogen-doped β-Ga 2 O 3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm 2 V −1 s −1 von Wakimoto, Daiki, Lin, Chia-Hung, Thieu, Quang Tu, Miyamoto, Hironobu, Sasaki, Kohei, Kuramata, Akito

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Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy von Tadjer, Marko J., Sasaki, Kohei, Wakimoto, Daiki, Anderson, Travis J., Mastro, Michael A., Gallagher, James C., Jacobs, Alan G., Mock, Alyssa L., Koehler, Andrew D., Ebrish, Mona, Hobart, Karl D., Kuramata, Akito

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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen von Tadjer, Marko J., Koehler, Andrew D., Freitas, Jaime A., Gallagher, James C., Specht, Matty C., Glaser, Evan R., Hobart, Karl D., Anderson, Travis J., Kub, Fritz J., Thieu, Quang T., Sasaki, Kohei, Wakimoto, Daiki, Goto, Ken, Watanabe, Shinya, Kuramata, Akito

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Preparation of 2-in.-diameter (001) β-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy von Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Sasaki, Kohei, Goto, Ken, Konishi, Keita, Murakami, Hisashi, Kuramata, Akito, Kumagai, Yoshinao, Yamakoshi, Shigenobu

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First Demonstration of Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes von Sasaki, Kohei, Wakimoto, Daiki, Thieu, Quang Tu, Koishikawa, Yuki, Kuramata, Akito, Higashiwaki, Masataka, Yamakoshi, Shigenobu

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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs von Chabak, Kelson D., McCandless, Jonathan P., Moser, Neil A., Green, Andrew J., Mahalingam, Krishnamurthy, Crespo, Antonio, Hendricks, Nolan, Howe, Brandon M., Tetlak, Stephen E., Leedy, Kevin, Fitch, Robert C., Wakimoto, Daiki, Sasaki, Kohei, Kuramata, Akito, Jessen, Gregg H.

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Depletion-mode vertical Ga 2 O 3 trench MOSFETs fabricated using Ga 2 O 3 homoepitaxial films grown by halide vapor phase epitaxy von Sasaki, Kohei, Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Kuramata, Akito, Yamakoshi, Shigenobu

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Preparation of 2-in.-diameter (001) β-Ga 2 O 3 homoepitaxial wafers by halide vapor phase epitaxy von Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Sasaki, Kohei, Goto, Ken, Konishi, Keita, Murakami, Hisashi, Kuramata, Akito, Kumagai, Yoshinao, Yamakoshi, Shigenobu

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1.3 kV normally-off β-Ga2O3 vertical transistor with HfO2 gate-insulator von Wakimoto, Daiki, Lin, Chia-Hung, Thieu, Quang Tu, Miyamoto, Hironobu, Sasaki, Kohei, Kuramata, Akito

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High breakdown voltage MOS capacitor fabricated on the β-Ga2O3 epitaxial layer with low donor concentration von Wakimoto, Daiki, Sasaki, Kouhei, Miyamoto, Hironobu, Thieu, Quang Tu, Kuramata, Akito, Yamakosi, Shigenobu

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[Highlight] Demonstration of Over 10-A β-Ga2O3Schottky Barrier Diodes von Sasaki, Kohei, Takatsuka, Akio, Otsuka, Fumio, Thieu, Quang Tu, Lingaparthi, Ravikiran, Wakimoto, Daiki, Yamakoshi, Shigenobu, Kuramata, Akito

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Ga2O3 trench MOSFETs fabricated using Ga2O3 films grown by HVPE von Sasaki, Kohei, Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Takatsuka, Akio, Kuramata, Akito, Yamakoshi, Shigenobu

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Ultra-Low-Loss Ga2O3 Trench MOS-Type Schottky Barrier Diodes von Sasaki, Kohei, Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Kuramata, Akito, Yamakoshi, Shigenobu

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Ga2O3 JBS Diodes Using p-Type NiO von Sasaki, Kohei, Thieu, Quang Tu, Wakimoto, Daiki, Koishikawa, Yuki, Kuramata, Akito, Yamakoshi, Shigenobu

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Ga2O3-based crystal film, and crystal multilayer structure von Wakimoto, Daiki, Sasaki, Kohei

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FIN FIELD EFFECT TRANSISTOR von MIYAMOTO HIRONOBU, WAKIMOTO DAIKI

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