Silicon carbide and diamond for high temperature device applications von Willander, Magnus, Friesel, Milan, Wahab, Qamar-ul, Straumal, Boris

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High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy von Chang, K. C., Nuhfer, N. T., Porter, L. M., Wahab, Q.

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Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states von Ewing, D. J., Porter, L. M., Wahab, Q., Ma, X., Sudharshan, T. S., Tumakha, S., Gao, M., Brillson, L. J.

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Ionization rates and critical fields in 4H silicon carbide von Konstantinov, A. O., Wahab, Q., Nordell, N., Lindefelt, U.

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Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC von Bano, N., Hussain, I., Nur, O., Willander, M., Wahab, Q., Henry, A., Kwack, H.S., Le Si Dang, D.

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Interface state density distribution in Au/n-ZnO nanorods Schottky diodes von Faraz, S M, Willander, M, Wahab, Q

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Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes von Wahab, Q., Ellison, A., Henry, A., Janzén, E., Hallin, C., Di Persio, J., Martinez, R.

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Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy von Ashraf, H., Arshad, M. Imran, Faraz, S. M., Wahab, Q., Hageman, P. R., Asghar, M.

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Interface state density of free-standing GaN Schottky diodes von Faraz, S M, Ashraf, H, Imran Arshad, M, Hageman, P R, Asghar, M, Wahab, Q

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Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers von Tumakha, S., Ewing, D. J., Porter, L. M., Wahab, Q., Ma, X., Sudharshan, T. S., Brillson, L. J.

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Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy von Asghar, M., Iqbal, F., Faraz, S., Jokubavicius, V., Wahab, Q., Syväjärvi, M.

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Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method von Asghar, M., Iqbal, F., Faraz, S.M., Jokubavicius, V., Wahab, Q., Syväjärvi, M.

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Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes von Ewing, D J, Wahab, Q, Ciechonski, R R, Syväjärvi, M, Yakimova, R, Porter, L M

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Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD von Azam, Sher, Svensson, C., Wahab, Q.

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Growth of 6H and 4H–SiC by sublimation epitaxy von Syväjärvi, M., Yakimova, R., Tuominen, M., Kakanakova-Georgieva, A., MacMillan, M.F., Henry, A., Wahab, Q., Janzén, E.

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Wideband and multiband CMOS LNAs: State-of-the-art and future prospects von Arshad, S., Zafar, F., Ramzan, R., Wahab, Q.

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Study of avalanche breakdown and impact ionization in 4H silicon carbide von Konstantinov, A. O., Wahab, Q., Nordell, N., Lindefelt, U.

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A 3 kV Schottky barrier diode in 4H-SiC von Wahab, Q., Kimoto, T., Ellison, A., Hallin, C., Tuominen, M., Yakimova, R., Henry, A., Bergman, J. P., Janzén, E.

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Voltage- and Frequency-Dependent Electrical Characteristics and Interface State Density of Ni/ZnO Schottky Diodes von Faraz, S.M., Tajwar, Z., ul Wahab, Q., Ulyashin, A., Yakimova, R.

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Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes von Faraz, Sadia Muniza, Jafri, Syed Riaz un Nabi, Khan, Hashim Raza, Shah, Wakeel, Alvi, Naveed ul Hassan, Wahab, Qamar ul, Nur, Omer

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