Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells von Wagener, Magnus C., Montesdeoca, Denise, Lu, Qi, Marshall, Andrew R.J., Krier, Anthony, Botha, J.R., Carrington, Peter J.

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Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration von Fujita, Hiromi, Carrington, Peter J., Wagener, Magnus C., Botha, Johannes R., Marshall, Andrew R. J., James, Juanita, Krier, Anthony, Lee, Kan-Hua, Ekins-Daukes, Nicholas John

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Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells von Carrington, Peter James, Mahajumi, Abu Syed, Wagener, Magnus C., Botha, Johannes Reinhardt, Zhuang, Qian, Krier, Anthony

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Carrier extraction behaviour in type II GaSb GaAs quantum ring solar cells von Fujita, Hiromi, James, Juanita, Carrington, Peter J, Marshall, Andrew R J, Krier, Anthony, Wagener, Magnus C, Botha, Johannes R

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Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon von Lu, Jinggang, Wagener, Magnus, Rozgonyi, George, Rand, James, Jonczyk, Ralf

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Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers von Witting, Ian, Clark, Roger, Wagener, Magnus C., Rozgonyi, George A., Stoddard, Nathan, Wu, Bei, Park, Yongkook

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Passivation of hybrid-orientation direct silicon bonded interfaces von Wagener, Magnus C., Seacrist, Mike, Rozgonyi, George A.

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MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Silicon von Yu, Liya, Lu, Jinggang, Wagener, Magnus, Yu, Xuegong, Rozgonyi, George

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Evaluation of Hybrid-Orientation (110)/(100) Direct Silicon Bonded Interfaces von Wagener, Magnus C., Seacrist, Mike, Rozgonyi, George

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Evaluation of Silicon Photovoltaic Devices with Near-Field Scanning Optical Microscopy von Wagener, Magnus C., Rozgonyi, George

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Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces von Zhao, W., Ries, M., Wagener, Magnus C., Rozgonyi, George A., Zhang, R.H., Seacrist, M.

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Passivation of hybrid-orientation direct silicon bonded interfaces von WAGENER, Magnus C, SEACRIST, Mike, ROZGONYI, George A

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Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy von Hodgson, Peter, Carrington, Peter

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Open Circuit Voltage Increase of GaSb/GaAs Quantum Ring Solar Cell under High Hydrostatic Pressure von Montesdeoca Cardenes, Denise

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Hierarchy of Tools for the Characterization of Performance Limiting Defects in PV and IC Materials von Rozgonyi, George, Wagener, Magnus C.

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METHOD AND APPARATUS FOR DETERMINING DOPANT DENSITY IN SEMICONDUCTOR MATERIALS von WAGENER MAGNUS CARR, WAGENER VIERA, BOTHA JOHANNES REINHARDT

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Evaluation of Hybrid-Orientation Si(110)/Si(100) Direct Bonded Interfaces von Wagener, Magnus C., Seacrist, Mike, Rozgonyi, George

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MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Si von Yu, Liya, Lu, Jinggang, Wagener, Magnus, Yu, Xuegong, Rozgonyi, George

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METHOD AND APPARATUS FOR DETERMINING DOPANT DENSITY IN SEMICONDUCTOR MATERIALS von BOTHA, JOHANNES REINHARDT, WAGENER, MAGNUS CARR, WAGENER, VIERA

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A clinically applicable connectivity signature for glioblastoma includes the tumor network driver CHI3L1 von Hai, Ling, Hoffmann, Dirk C., Wagener, Robin J., Azorin, Daniel D., Hausmann, David, Xie, Ruifan, Huppertz, Magnus-Carsten, Hiblot, Julien, Sievers, Philipp, Heuer, Sophie, Ito, Jakob, Cebulla, Gina, Kourtesakis, Alexandros, Kaulen, Leon D., Ratliff, Miriam, Mandelbaum, Henriette, Jung, Erik, Jabali, Ammar, Horschitz, Sandra, Ernst, Kati J., Reibold, Denise, Warnken, Uwe, Venkataramani, Varun, Will, Rainer, Suvà, Mario L., Herold-Mende, Christel, Sahm, Felix, Winkler, Frank, Schlesner, Matthias, Wick, Wolfgang, Kessler, Tobias

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