Efficient and uniform production of III-nitride films by multiwafer MOVPE von Deschler, M, Beccard, R, Wachtendorf, B, Schmitz, D, Juergensen, H

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Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures von Beccard, R, Niebuhr, R, Wachtendorf, B, Schmitz, D, Jürgensen, H

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Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization von Beccard, R., Schoen, O., Wachtendorf, B., Schhmitz, D., Juergensen, H., Woelk, E.

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MOVPE production reactors for high temperature electronics von Protzmann, H., Wachtendorf, B., Schoen, O., Schmitz, D., Strauch, G., Juergensen, H.

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Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system von Taudt, W., Wachtendorf, B., Beccard, R., Wahid, A., Heuken, M., Gurskii, A.L., Vakarelska, K.

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Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system von TAUDT, W, WACHTENDORF, B, SAUERLÄNDER, F, HAMADEH, H, LAMPE, S, HEUKEN, M

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Electrical Characterisation of MOVPE Grown Au/ZnSE/GaAs Heterostructures von Wachtendorf, B., Evrard, R., Heuken, M., Taudt, W., Germain, M.

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Oxygen and tellurium impurities in zinc selenide grown by metalorganic vapour phase epitaxy von Gurskii, A.L., Vakarelska, K., Taudt, W., Wachtendorf, B., Söllner, J., Wahid, A., Heuken, M.

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Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors von Woitok, J., Wachtendorf, B., Heuken, M., Taudt, W., Platen, J.

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Temperature and excitation dependent photoluminescence of undoped and nitrogen-doped ZnSe epilayers von Gurskii, A. L., Gavrilenko, A. N., Lutsenko, E. V., Yablonskii, G. P., Taudt, W., Hamadeh, H., Wachtendorf, B., Söllner, J., Schmoranzer, J., Heuken, M.

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Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System von Hoffmann, Andreas, Taudt, W., Gurskii, A.L., Kutzer, V., Hamadeh, H., Lampe, S., Wachtendorf, B., Heuken, M., Derscheid, U., Heitz, R.

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Quantum Yield of Band-Edge Emission between 77 and 300 K of Undoped and Nitrogen-Doped ZnSe Epilayers Grown by MOVPE von Gurskii, A.L., Taudt, W., Schmoranzer, J., Lutsenko, E.V., Yablonskii, G.P., Wachtendorf, B., Heuken, M., Gavrilenko, A.N., Söllner, J.

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MOVPE production reactors for high temperature electronics : III-V nitrides and silicon carbide von PROTZMANN, H, WACHTENDORF, B, SCHOEN, O, SCHMITZ, D, STRAUCH, G, JUERGENSEN, H

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High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors von Schmitz, D., Beccard, R., Schoen, O., Niebuhr, R., Wachtendorf, B., Juergensen, Holger

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High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors von Schmitz, D, Beccard, R, Schoen, O, Niebuhr, R, Wachtendorf, B, Juergensen, Holger

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AlGaN/InGaN/GaN materials engineering for lasers and optoelectronic applications [MOCVD reactors] von Woelk, E., Schmitz, D., Strauch, G., Wachtendorf, B., Jurgensen, H.

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Production of III-nitride films for LED and laser applications by multiwafer MOVPE von Beccard, R., Wachtendorf, B., Schon, O., Schmitz, D., Jurgensen, H., Woelk, E.

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Loss of Independent Living in Patients Undergoing Transcatheter or Surgical Aortic Valve Replacement: A Retrospective Cohort Study von Blank, Michael, Robitaille, Mark J., Wachtendorf, Luca J., Linhardt, Felix C., Ahrens, Elena, Strom, Jordan B., Azimaraghi, Omid, Schaefer, Maximilian S., Chu, Louis M., Moon, Jee-Young, Tarantino, Nicola, Nair, Singh R., Thalappilil, Richard, Tam, Christopher W., Leff, Jonathan, Di Biase, Luigi, Eikermann, Matthias

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A comparison of silicon and oxygen doping of GaN and optical and electrical properties of deposited layers von Niebuhr, R., Wachtendorf, B., Schmitz, D., Beccard, R., Jurgensen, H., Santic, B., Schlotter, P., Meier, M., Kaufmann, U., Bachem, K.H.

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Multifunctional multilayer graphene/elastomer nanocomposites von Frasca, D., Schulze, D., Wachtendorf, V., Huth, C., Schartel, B.

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