A detailed analysis of the hybrid lattice-reduction and meet-in-the-middle attack von Wunderer, Thomas

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A Hybrid Lattice Basis Reduction and Quantum Search Attack on LWE von Göpfert, Florian, van Vredendaal, Christine, Wunderer, Thomas

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Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures von Tabataba-Vakili, Farsane, Wunderer, Thomas, Kneissl, Michael, Yang, Zhihong, Teepe, Mark, Batres, Max, Feneberg, Martin, Vancil, Bernard, Johnson, Noble M.

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Resonator-Length Dependence of Electron-Beam-Pumped UV-A GaN-Based Lasers von Wunderer, Thomas, Jeschke, Joerg, Zhihong Yang, Teepe, Mark, Batres, Max, Vancil, Bernard, Johnson, Noble

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Near ultraviolet photonic integrated lasers based on silicon nitride von Siddharth, Anat, Wunderer, Thomas, Lihachev, Grigory, Voloshin, Andrey S., Haller, Camille, Wang, Rui Ning, Teepe, Mark, Yang, Zhihong, Liu, Junqiu, Riemensberger, Johann, Grandjean, Nicolas, Johnson, Noble, Kippenberg, Tobias J.

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Revisiting the Sparsification Technique in Kannan's Embedding Attack on LWE von Wang, Yuntao, Wunderer, Thomas

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Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates von Wunderer, Thomas, Chua, Christopher L, Yang, Zhihong, Northrup, John E, Johnson, Noble M, Garrett, Gregory A, Shen, Hongen, Wraback, Michael

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In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers von Wunderer, Thomas, Northrup, John E., Yang, Zhihong, Teepe, Mark, Strittmatter, André, Johnson, Noble M., Rotella, Paul, Wraback, Michael

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Planar semipolar ( 10 1 ¯ 1 ) GaN on ( 11 2 ¯ 3 ) sapphire von Schwaiger, Stephan, Argut, Ilona, Wunderer, Thomas, Rösch, Rudolf, Lipski, Frank, Biskupek, Johannes, Kaiser, Ute, Scholz, Ferdinand

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Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripes von Wunderer, Thomas, Brückner, Peter, Neubert, Barbara, Scholz, Ferdinand, Feneberg, Martin, Lipski, Frank, Schirra, Martin, Thonke, Klaus

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Growth and coalescence behavior of semipolar $(11{bar {2}}2)$ GaN on pre-structured r-plane sapphire substrates von Schwaiger, Stephan, Metzner, Sebastian, Wunderer, Thomas, Argut, Ilona, Thalmair, Johannes, Lipski, Frank, Wieneke, Matthias, Bläsing, Jürgen, Bertram, Frank, Zweck, Josef, Krost, Alois, Christen, Jürgen, Scholz, Ferdinand

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Influence of slight misorientations of r -plane sapphire substrates on the growth of nonpolar a -plane GaN layers via HVPE von Schwaiger, Stephan, Lipski, Frank, Wunderer, Thomas, Scholz, Ferdinand

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Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$overline {2} $2) and (10$overline {1} $1) pyramid facets von Metzner, Sebastian, Bertram, Frank, Karbaum, Christopher, Hempel, Thomas, Wunderer, Thomas, Schwaiger, Stephan, Lipski, Frank, Scholz, Ferdinand, Wächter, Clemens, Jetter, Michael, Michler, Peter, Christen, Jürgen

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Stacking fault-related luminescence features in semi-polar GaN von Tischer, Ingo, Feneberg, Martin, Schirra, Martin, Yacoub, Hady, Sauer, Rolf, Thonke, Klaus, Wunderer, Thomas, Scholz, Ferdinand, Dieterle, Levin, Müller, Erich, Gerthsen, Dagmar

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Advanced dispersion engineering of a III-nitride micro-resonator for a blue frequency comb von Dorche, Ali Eshaghian, Timucin, Dogan, Thyagarajan, Krishnan, Wunderer, Thomas, Johnson, Noble, Schwartz, David

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FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY von Wunderer, Thomas

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Forming optical components using selective area epitaxy von Wunderer, Thomas

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EPITAXIAL STRUCTURE HAVING INTEGRATED MICROCHANNELS von Wunderer, Thomas

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FORMING OPTICAL COMPONENTS USING SELECTIVE AREA EPITAXY von Wunderer, Thomas

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GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets von Scholz, Ferdinand, Wunderer, Thomas, Neubert, Barbara, Feneberg, Martin, Thonke, Klaus

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