A Millisecond-Anneal-Assisted Selective Fully Silicided (FUSI) Gate Process von Da-Wen Lin, Wang, M., Ming-Lung Cheng, Yi-Ming Sheu, Tarng, B., Che-Min Chu, Chun-Wen Nieh, Chia-Ping Lo, Wen-Chi Tsai, Lin, R., Shyh-Wei Wang, Kuan-Lun Cheng, Chii-Ming Wu, Ming-Ta Lei, Chung-Cheng Wu, Diaz, C.H., Ming-Jer Chen

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Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3 von Yang, Ching-Chyuan, Chen, Ming-Sen, Hong, Tian-Jue, Wu, Chii-Ming, Wu, Jenn-Ming, Wu, Tai-Bor

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Low temperature deposition of Ba0.4Sr0.6TiO3 thin films on LaNiO3-buffered electrode by rf magnetron sputtering von WU, C.-M, WU, T.-B

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Effects of LaNiO3 conductive buffer layer on the structural and electrical characteristics of Ba0.4Sr0.6TiO3 thin films prepared by RF magnetron sputtering von WU, C.-M, WU, T.-B

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The impact of scaling on metal thickness for advanced back end of line interconnects von Chen, Hsueh-Chung, Fan, Su-Chen, Lin, Jian-Hong, Cheng, Yi-Lung, Jeng, Shin-Puu, Wu, Chii-Ming

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TOP-ELECTRODE BARRIER LAYER FOR RRAM von Wu, Chii-Ming, Lin, Hsing-Lien, Jiang, Fa-Shen

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TOP-ELECTRODE BARRIER LAYER FOR RRAM von Wu, Chii-Ming, Lin, Hsing-Lien, Jiang, Fa-Shen

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Top-electrode barrier layer for RRAM von Wu, Chii-Ming, Lin, Hsing-Lien, Jiang, Fa-Shen

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FILM STRUCTURE FOR BOND PAD von Tsai, Tzu-Chung, Chang, Yao-Wen, Wu, Chii Ming, Yang, Julie

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Data storage structure for improving memory cell reliability von Wu, Chii-Ming, Tsai, Tzu-Chung, Trinh, Hai-Dang, Jiang, Fa-Shen, Tsai, Cheng-Yuan

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A low-temperature fabrication process of polycrystalline silicon-silicon p +- n junction diode von Wu, Chii-ming M., Yang, Edward S.

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DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY von Wu, Chii-Ming, Tsai, Tzu-Chung, Trinh, Hai-Dang, Jiang, Fa-Shen, Tsai, Cheng-Yuan

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Data storage structure for improving memory cell reliability von Wu, Chii-Ming, Tsai, Tzu-Chung, Trinh, Hai-Dang, Jiang, Fa-Shen, Tsai, Cheng-Yuan

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Method for forming semiconductor device having isolation structures with different thicknesses von Wu, Cheng-Ta, Wu, Chii-Ming, Chau, Cheng-Po, Syue, Sen-Hong

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Diffusion barrier layer in top electrode to increase break down voltage von Wu, Chii-Ming, Trinh, Hai-Dang, Lin, Hsing-Lien, Jiang, Fa-Shen

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DIFFUSION BARRIER LAYER IN TOP ELECTRODE TO INCREASE BREAK DOWN VOLTAGE von Wu, Chii-Ming, Trinh, Hai-Dang, Lin, Hsing-Lien, Jiang, Fa-Shen

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RRAM structure von Wu, Chii-Ming, Trinh, Hai-Dang, Lin, Hsing-Lien, Jiang, Fa-Shen

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Method for manufacturing reflective structure von Wu, Chii-Ming, Chang, Yao-Wen, Tsai, Tzu-Chung, Lin, Chia-Hua, Chen, Eugene I-Chun, Tsai, Cheng-Yuan

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PHYSICAL VAPOR DEPOSITION CHAMBER WITH TARGET SURFACE MORPHOLOGY MONITOR von Wu, Chii-Ming, Trinh, Hai-Dang, Pan, Shing-Chyang

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FILM STRUCTURE FOR BOND PAD von Wu, Chii-Ming, Tsai, Tzu-Chung, Chang, Yao-Wen, Yang, Julie

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