Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices von Yang, N., Henson, W.K., Hauser, J.R., Wortman, J.J.

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A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides von Yang, N., Henson, W.K., Wortman, J.J.

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Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors von Henson, W.K., Ahmed, K.Z., Vogel, E.M., Hauser, J.R., Wortman, J.J., Venables, R.D., Xu, M., Venables, D.

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Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime von Henson, W.K., Yang, N., Kubicek, S., Vogel, E.M., Wortman, J.J., De Meyer, K., Naem, A.

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Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides von Nian Yang, Henson, W.K., Hauser, J.R., Wortman, J.J.

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Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime von Ahmed, K., Ibok, E., Bains, G., Chi, D., Ogle, B., Wortman, J.J., Hauser, J.R.

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Study of low-frequency charge pumping on thin stacked dielectrics von Weintraub, C.E., Vogel, E., Hauser, J.R., Nian Yang, Misra, V., Wortman, J.J., Ganem, J., Masson, P.

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Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's von Henson, W.K., Yang, N., Wortman, J.J.

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Modeled tunnel currents for high dielectric constant dielectrics von Vogel, E.M., Ahmed, K.Z., Hornung, B., Henson, W.K., McLarty, P.K., Lucovsky, G., Hauser, J.R., Wortman, J.J.

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Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films von Morfouli, P., Ghibaudo, G., Ouisse, T., Vogel, E., Hill, W., Misra, V., McLarty, P., Wortman, J.J.

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A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs von Yang, Nian, Wortman, Jimmie J

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Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations von Zafar, S., Conrad, K. A., Liu, Q., Irene, E. A., Hames, G., Kuehn, R., Wortman, J. J.

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A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrat... von Ahmed, K., Wortman, J.J., Hauser, J.R.

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A simple parameter extraction method for ultra-thin oxide MOSFETs von McLarty, P.K, Cristoloveanu, S, Faynot, O, Misra, V, Hauser, J.R, Wortman, J.J

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Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics von Ibok, E., Ahmed, K., Ming-Yin Hao, Ogle, B., Wortman, J.J., Hauser, J.R.

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Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs von Hill, W.L., Vogel, E.M., Misra, V., McLarty, P.K., Wortman, J.J.

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A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering von BAN, I, ÖZTÜRK, M. C, MISRA, V, WORTMAN, J. J, VENABLES, D, MAHER, D. M

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Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling von SHANWARE, A, MASSOUD, H. Z, VOGEL, E, HENSON, K, HAUSER, J. R, WORTMAN, J. J

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Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition von Vogel, E.M., Hill, W.L., Misra, V., McLarty, P.K., Wortman, J.J., Hauser, J.R., Morfouli, P., Ghibaudo, G., Ouisse, T.

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Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by Low-Pressure Rapid Thermal Chemical Vapor Deposition von Masson, P., Morfouli, P., Autran, J.L., Wortman, J.J.

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