Low-cost and nanoscale non-volatile memory concept for future silicon chips von Lankhorst, Martijn H. R, Ketelaars, Bas W. S. M. M, Wolters, R. A. M

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On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films von Van Bui, H., Kovalgin, A.Y., Wolters, R.A.M.

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Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD von BOOGAARD, A, KOVALGIN, A. Y, BRUNETS, I, AAMINK, A. A. I, HOLLEMAN, J, WOLTERS, R. A. M, SCHMITZ, J

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Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range von Stavitski, N., van Dal, M.J.H., Lauwers, A., Vrancken, C., Kovalgin, A.Y., Wolters, R.A.M.

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Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices von Brunets, I., Aarnink, A.A.I., Boogaard, A., Kovalgin, A.Y., Wolters, R.A.M., Holleman, J., Schmitz, J.

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Strain characterization of FinFETs using Raman spectroscopy von Kaleli, B., van Hemert, T., Hueting, R.J.E., Wolters, R.A.M.

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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode von Kaleli, B., Nguyen, M.D., Schmitz, J., Wolters, R.A.M., Hueting, R.J.E.

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The development of titanium silicide–boron-doped polysilicon resistive temperature sensors von Vereshchagina, E, Wolters, R A M, Gardeniers, J G E

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Transition metal silicides in silicon technology von Reader, A H, Ommen, A H van, Weijs, P J W, Wolters, R A M, Oostra, D J

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Net negative charge in low-temperature SiO2 gate dielectric layers von BOOGAARD, A, KOVALGIN, A. Y, WOLTERS, R. A. M

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Growth Kinetics and Oxidation Mechanism of ALD TiN Thin Films Monitored by In Situ Spectroscopic Ellipsometry von Van Bui, H., Groenland, A. W., Aarnink, A. A. I., Wolters, R. A. M., Schmitz, J., Kovalgin, A. Y.

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Correlation between stress voiding of Al(Si)(Cu) metallizations and crystal orientation of aluminum grains von KORDIC, S, WOLTERS, R. A. M, TROOST, K. Z

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Specific Contact Resistance of Phase Change Materials to Metal Electrodes von Roy, Deepu, Zandt, M A A, Wolters, R A M

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Atomic Layer Deposition of W[sub 1.5]N Barrier Films for Cu Metallization von Bystrova, S., Aarnink, A. A. I., Holleman, J., Wolters, R. A. M.

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Measurement of reaction heats using a polysilicon-based microcalorimetric sensor von Vereshchagina, E., Wolters, R.A.M., Gardeniers, J.G.E.

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An Area-Correction Model for Accurate Extraction of Low Specific Contact Resistance von Kovalgin, A. Y., Tiggelman, N., Wolters, R. A. M.

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Wafer temperature measurement in PVD systems using the Co–Si reaction von van Graven, A.M., Wolters, R.A.M.

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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode: Micro/Nano Devices and Systems 2013: An open thematic journal issue von KALELI, B, NGUYEN, M. D, SCHMITZ, J, WOLTERS, R. A. M, HUETING, R. J. E

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Novel Test Structures for Dedicated Temperature Budget Determination von Faber, E. J., Wolters, R. A. M., Schmitz, J.

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Growth of Sub-Nanometer Thin Continuous TiN Films by Atomic Layer Deposition von Van Bui, H., Kovalgin, A. Y., Wolters, R. A. M.

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