Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon von Wirths, Stephan, Mayer, Benedikt F, Schmid, Heinz, Sousa, Marilyne, Gooth, Johannes, Riel, Heike, Moselund, Kirsten E

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Optically Pumped GeSn Microdisk Lasers on Si von Stange, Daniela, Wirths, Stephan, Geiger, Richard, Schulte-Braucks, Christian, Marzban, Bahareh, von den Driesch, Nils, Mussler, Gregor, Zabel, Thomas, Stoica, Toma, Hartmann, Jean-Michel, Mantl, Siegfried, Ikonic, Zoran, Grützmacher, Detlev, Sigg, Hans, Witzens, Jeremy, Buca, Dan

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SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters von von den Driesch, Nils, Stange, Daniela, Wirths, Stephan, Rainko, Denis, Povstugar, Ivan, Savenko, Aleksei, Breuer, Uwe, Geiger, Richard, Sigg, Hans, Ikonic, Zoran, Hartmann, Jean‐Michel, Grützmacher, Detlev, Mantl, Siegfried, Buca, Dan

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Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy von Knoedler, Moritz, Bologna, Nicolas, Schmid, Heinz, Borg, Mattias, Moselund, Kirsten E, Wirths, Stephan, Rossell, Marta D, Riel, Heike

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High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors von Wirths, Stephan, Stange, Daniela, Pampillón, Maria-Angela, Tiedemann, Andreas T, Mussler, Gregor, Fox, Alfred, Breuer, Uwe, Baert, Bruno, San Andrés, Enrique, Nguyen, Ngoc D, Hartmann, Jean-Michel, Ikonic, Zoran, Mantl, Siegfried, Buca, Dan

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Thermally activated diffusion and lattice relaxation in (Si)GeSn materials von von den Driesch, Nils, Wirths, Stephan, Troitsch, Rene, Mussler, Gregor, Breuer, Uwe, Moutanabbir, Oussama, Grützmacher, Detlev, Buca, Dan

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Ni(SiGeSn) Metal Contact Formation on Low Bandgap Strained (Si)Ge(Sn) Semiconductors von Wirths, Stephan, Troitsch, Rene, Mussler, Gregor, Zaumseil, Peter, Hartmann, Jean-Michel, Schroeder, Thomas, Mantl, Siegfried, Buca, Dan

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In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability von Fournier-Lupien, Jean-Hughes, Chagnon, Dany, Lévesque, Pierre, AlMutairi, AbdulAziz Awadh, Wirths, Stephan, Pippel, Eckhard, Mussler, Gregor, Hartmann, Jean-Michel, Mantl, Siegfried, Buca, Dan, Moutanabbir, Oussama

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Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation von Wirths, Stephan, Sundaramoorthy, Vinoth, Knoll, Lars

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Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC von Alfieri, Giovanni, Wirths, Stephan, Buca, Dan, Nipoti, Roberta

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Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects von Gooth, Johannes, Borg, Mattias, Schmid, Heinz, Schaller, Vanessa, Wirths, Stephan, Moselund, Kirsten, Luisier, Mathieu, Karg, Siegfried, Riel, Heike

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High-Mobility GaSb Nanostructures Cointegrated with InAs on Si von Borg, Mattias, Schmid, Heinz, Gooth, Johannes, Rossell, Marta D, Cutaia, Davide, Knoedler, Moritz, Bologna, Nicolas, Wirths, Stephan, Moselund, Kirsten E, Riel, Heike

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Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates von Mayer, Benedikt F., Wirths, Stephan, Mauthe, Svenja, Staudinger, Philipp, Sousa, Marilyne, Winiger, Joel, Schmid, Heinz, Moselund, Kirsten E.

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On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts von Romano, Gianpaolo, Wirths, Stephan, Donato, Nazareno, Udrea, Florin, Naydenov, Kaloyan, Mihaila, Andrei, Knoll, Lars

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Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs von Wirths, Stephan, Romano, Gianpaolo, Arango, Yulieth, Alfieri, Giovanni, Wehrle, Moritz, Sundaramoorthy, Vinoth, Mihaila, Andrei, Knoll, Lars

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Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts von Romano, Gianpaolo, Wirths, Stephan, Donato, Nazareno, Udrea, Florin, Naydenov, Kaloyan, Mihaila, Andrei, Knoll, Lars

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Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs von Wirths, Stephan, Han, Yi, Yang, Dong, Buca, Dan Mihai, Zhao, Qing Tai, Knoll, Lars

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High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs von Baumann, David, Mengotti, Elena, Jormanainen, Joni, Bettega, Jason, Bianda, Enea, Wirths, Stephan

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Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs von Wirths, Stephan, Torresin, Daniele, Romano, Gianpaolo, Mihaila, Andrei, Knoll, Lars, Bianda, Enea

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Dopant-Induced Modifications of Ga xIn(1- x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111) von Bologna, Nicolas, Wirths, Stephan, Francaviglia, Luca, Campanini, Marco, Schmid, Heinz, Theofylaktopoulos, Vasileios, Moselund, Kirsten E, Fontcuberta I Morral, Anna, Erni, Rolf, Riel, Heike, Rossell, Marta D

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