The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy von Foxon, C T, Harrison, I, Novikov, S V, Winser, A J, Campion, R P, Li, T

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Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates von Novikov, S.V., Zhao, L.X., Winser, A.J., Kappers, M.J., Barnard, J.S., Harrison, I., Humphreys, C.J., Foxon, C.T.

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A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride von Novikov, S V, Winser, A J, Harrison, I, Davis, C S, Foxon, C T

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Bismuth a new dopant for GaN films grown by molecular beam epitaxy surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic von NOVIKOV, S. V, WINSER, A. J, LI, T, CAMPION, R, HARRISON, I, FOXON, C. T

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Arsenic-doped GaN grown by molecular beam epitaxy von Foxon, C.T, Novikov, S.V, Cheng, T.S, Davis, C.S, Campion, R.P, Winser, A.J, Harrison, I

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The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy von Novikov, S.V., Winser, A.J., Bell, A., Harrison, I., Li, T., Campion, R.P., Staddon, C.R., Davis, C.S., Ponce, F.A., Foxon, C.T.

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Arsenic incorporation in GaN during growth by molecular beam epitaxy von Foxon, C.T., Novikov, S.V., Li, T., Campion, R.P., Winser, A.J., Harrison, I., Kappers, M.J., Humphreys, C.J.

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Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy von Foxon, C.T., Novikov, S.V., Li, T., Campion, R.P., Winser, A.J., Harrison, I.

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Temperature Dependence of the Miscibility Gap on the GaN-Rich Side of the Ga-N-As System von Novikov, S.V., Li, T., Winser, A.J., Campion, R.P., Staddon, C.R., Davis, C.S., Harrison, I., Foxon, C.T.

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Strong blue emission from GaN isoelectronically doped with arsenic von Foxon, C.T, Novikov, S.V, Li, T, Campion, R.P, Davis, C.S, Winser, A.J, Harrison, I, Liao, Y

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Blue emission from arsenic doped gallium nitride von Winser, A.J., Harrison, I., Novikov, S.V., Davis, C.S., Campion, R., Cheng, T.S., Foxon, C.T.

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A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy von Marlafeka, S., Bock, N., Cheng, T.S., Novikov, S.V., Winser, A.J., Harrison, I., Foxon, C.T., Brown, P.D.

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The Influence of As on the Optimum Nitrogen to Gallium Ratio Required to Grow High Quality GaN Films by Molecular Beam Epitaxy von Foxon, C.T., Novikov, S.V., Campion, R.P., Liao, Y., Winser, A.J., Harrison, I.

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Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy von Xu, H.Z., Wang, Z.G., Harrison, I., Bell, A., Ansell, B.J., Winser, A.J., Cheng, T.S., Foxon, C.T., Kawabe, M.

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On the Origin of Blue Emission from As-Doped GaN von Harrison, I., Novikov, S.V., Li, T., Campion, R.P., Staddon, C.R., Davis, C.S., Liao, Y., Winser, A.J., Foxon, C.T.

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The Influence of Arsenic Incorporation on the Optical Properties of As-doped GaN Films Grown by Molecular Beam Epitaxy Using Arsenic Tetramers von Novikov, S.V., Li, T., Winser, A.J., Foxon, C.T., Campion, R.P., Staddon, C.R., Davis, C.S., Harrison, I., Kovarsky, A.P., Ber, B.Ja

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The Transition from Blue Emission in As-Doped GaN to GaNAs Alloys in Layers Grown by Molecular Beam Epitaxy von Foxon, C.T., Novikov, S.V., Liao, Y., Winser, A.J., Harrison, I., Li, T., Campion, R.P., Staddon, C.R., Davis, C.S.

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Strong blue emission from As doped GaN grown by molecular beam epitaxy von Winser, A. J., Novikov, S. V., Davis, C. S., Cheng, T. S., Foxon, C. T., Harrison, I.

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Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy von Foxon, C.T., Novikov, S.V., Li, T., Campion, R.P., Winser, A.J., Harrison, I.

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules von FOXON, C. T, HARRISON, I, NOVIKOV, S. V, LI, T, CAMPION, R. P, STADDON, C. R, DAVIS, C. S, WINSER, A. J, KOVARSKY, A. P, BER, B. Ja

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