Efficient and self-adaptive in-situ learning in multilayer memristor neural networks von Li, Can, Belkin, Daniel, Li, Yunning, Yan, Peng, Hu, Miao, Ge, Ning, Jiang, Hao, Montgomery, Eric, Lin, Peng, Wang, Zhongrui, Song, Wenhao, Strachan, John Paul, Barnell, Mark, Wu, Qing, Williams, R. Stanley, Yang, J. Joshua, Xia, Qiangfei

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A Family of Stateful Memristor Gates for Complete Cascading Logic von Kim, Kyung Min, Williams, R. Stanley

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Charge disproportionate molecular redox for discrete memristive and memcapacitive switching von Goswami, Sreetosh, Rath, Santi P., Thompson, Damien, Hedström, Svante, Annamalai, Meenakshi, Pramanick, Rajib, Ilic, B. Robert, Sarkar, Soumya, Hooda, Sonu, Nijhuis, Christian A., Martin, Jens, Williams, R. Stanley, Goswami, Sreebrata, Venkatesan, T.

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The mechanism of electroforming of metal oxide memristive switches von Joshua Yang, J, Miao, Feng, Pickett, Matthew D, Ohlberg, Douglas A A, Stewart, Duncan R, Lau, Chun Ning, Williams, R Stanley

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Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications von Merced-Grafals, Emmanuelle J, Dávila, Noraica, Ge, Ning, Williams, R Stanley, Strachan, John Paul

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Dynamical nonlinear memory capacitance in biomimetic membranes von Najem, Joseph S., Hasan, Md Sakib, Williams, R. Stanley, Weiss, Ryan J., Rose, Garrett S., Taylor, Graham J., Sarles, Stephen A., Collier, C. Patrick

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Summary of the Faraday Discussion on New memory paradigms: memristive phenomena and neuromorphic applications von Williams, R. Stanley

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Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2 von Kumar, Suhas, Pickett, Matthew D., Strachan, John Paul, Gibson, Gary, Nishi, Yoshio, Williams, R. Stanley

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Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior von Strukov, Dmitri B., Borghetti, Julien L., Williams, R. Stanley

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Memristive switching mechanism for metal oxide metal nanodevices von Stewart, Duncan R, Yang, J. Joshua, Pickett, Matthew D, Li, Xuema, Ohlberg, Douglas A. A, Williams, R. Stanley

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Direct Identification of the Conducting Channels in a Functioning Memristive Device von Strachan, John Paul, Pickett, Matthew D., Yang, J. Joshua, Aloni, Shaul, David Kilcoyne, A. L., Medeiros-Ribeiro, Gilberto, Stanley Williams, R.

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Writing to and reading from a nano-scale crossbar memory based on memristors von Vontobel, Pascal O, Robinett, Warren, Kuekes, Philip J, Stewart, Duncan R, Straznicky, Joseph, Stanley Williams, R

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Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor von Miao, Feng, Strachan, John Paul, Yang, J. Joshua, Zhang, Min-Xian, Goldfarb, Ilan, Torrezan, Antonio C., Eschbach, Peter, Kelley, Ronald D., Medeiros-Ribeiro, Gilberto, Williams, R. Stanley

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Energy and Space Efficient Parallel Adder Using Molecular Memristors von Yi, Su-In, Rath, Santi Prasad, Deepak, Venkatesan, T, Bhat, Navakanta, Goswami, Sreebrata, Williams, R Stanley, Goswami, Sreetosh

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Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors von Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Kilcoyne, Arthur L. David, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, Williams, R. Stanley

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Nano/CMOS architectures using a field-programmable nanowire interconnect von Snider, Gregory S, Williams, R Stanley

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Four-dimensional address topology for circuits with stacked multilayer crossbar arrays von Strukov, Dmitri B, Williams, R. Stanley

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Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors von Yi, Wei, Savel'ev, Sergey E., Medeiros-Ribeiro, Gilberto, Miao, Feng, Zhang, M.-X., Yang, J. Joshua, Bratkovsky, Alexander M., Williams, R. Stanley

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Synaptic Resistor Circuits Based on Al Oxide and Ti Silicide for Concurrent Learning and Signal Processing in Artificial Intelligence Systems von Gao, Dawei, Shenoy, Rahul, Yi, Suin, Lee, Jungmin, Xu, Mingjie, Rong, Zixuan, Deo, Atharva, Nathan, Dhruva, Zheng, Jian‐Guo, Williams, R. Stanley, Chen, Yong

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Long short-term memory networks in memristor crossbar arrays von Li, Can, Wang, Zhongrui, Rao, Mingyi, Belkin, Daniel, Song, Wenhao, Jiang, Hao, Yan, Peng, Li, Yunning, Lin, Peng, Hu, Miao, Ge, Ning, Strachan, John Paul, Barnell, Mark, Wu, Qing, Williams, R. Stanley, Yang, J. Joshua, Xia, Qiangfei

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