Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces von Teichmann, K, Wenderoth, M, Loth, S, Garleff, J. K, Wijnheijmer, A. P, Koenraad, P. M, Ulbrich, R. G

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Vector magnetic field microscopy using nitrogen vacancy centers in diamond von Maertz, B. J., Wijnheijmer, A. P., Fuchs, G. D., Nowakowski, M. E., Awschalom, D. D.

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Controlled charge switching on a single donor with a scanning tunneling microscope von Teichmann, K, Wenderoth, M, Loth, S, Ulbrich, R G, Garleff, J K, Wijnheijmer, A P, Koenraad, P M

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Nanoscale Potential Fluctuations in (GaMn)As/GaAs Heterostructures: From Individual Ions to Charge Clusters and Electrostatic Quantum Dots von Wijnheijmer, A. P, Makarovsky, O, Garleff, J. K, Eaves, L, Campion, R. P, Gallagher, B. L, Koenraad, P. M

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Enhanced donor binding energy close to a semiconductor surface von Wijnheijmer, A P, Garleff, J K, Teichmann, K, Wenderoth, M, Loth, S, Ulbrich, R G, Maksym, P A, Roy, M, Koenraad, P M

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Enhanced binding energy of manganese acceptors close to the GaAs(110) surface von Garleff, J. K., Wijnheijmer, A. P., Silov, A. Yu, van Bree, J., Van Roy, W., Tang, J.-M., Flatté, M. E., Koenraad, P. M.

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Challenges in cross-sectional scanning tunneling microscopy on semiconductors von Garleff, J K, Wijnheijmer, A P, Koenraad, P M

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Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs von Wijnheijmer, A. P., Garleff, J. K., v. d. Heijden, M. A., Koenraad, P. M.

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Bistable behavior of silicon atoms in the (110) surface of gallium arsenide von Garleff, J. K., Wijnheijmer, A. P., v. d.Enden, C. N., Koenraad, P. M.

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Challenges in cross-sectional scanning tunneling microscopy on semiconductors: (Nano)characterization of semiconductor materials and structures von GARLEFF, J. K, WIJNHEIJMER, A. P, KOENRAAD, P. M

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Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor von Wijnheijmer, A. P., Martí, X., Holý, V., Cukr, M., Novák, V., Jungwirth, T., Koenraad, P. M.

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Vector magnetic field microscopy using nitrogen vacancy centersin diamond von Maertz, B. J., Wijnheijmer, A. P., Fuchs, G. D., Nowakowski, M. E., Awschalom, D. D.

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Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy von Wijnheijmer, A. P., Garleff, J. K., Teichmann, K., Wenderoth, M., Loth, S., Koenraad, P. M.

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Vector magnetic field microscopy using nitrogen vacancy centers in diamond von Maertz, B J, Wijnheijmer, A P, Fuchs, G D, Nowakowski, M E, Awschalom, D D

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Influence of the tip work function on scanning tunneling microscopyand spectroscopy on zinc doped GaAs von Wijnheijmer, A. P., Garleff, J. K., v. d. Heijden, M. A., Koenraad, P. M.

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Computational models for interpretation of wave function imaging in cross-sectional STM of quantum dots von Maksym, P.A., Roy, Mervyn, Wijnheijmer, I., Koenraad, P.M.

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METHOD AND APPARATUS FOR PREVENTING EJECTION FAILURES CAUSED BY MEDIA DEFORMATIONS von VAN ACQUOIJ, Catharinus, WIJNHEIJMER, Albertine P

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METHOD AND APPARATUS FOR PREVENTING EJECTION FAILURES CAUSED BY MEDIA DEFORMATIONS von VAN ACQUOIJ, Catharinus, WIJNHEIJMER, Albertine P

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INK JET MAINTENANCE SPIT PATTERN von TEUSSINK, Bart, GOLLATZ, Johannes A.T, GERAETS, Jacques J.M, WIJNHEIJMER, Albertine P, LEUS, Gerardus R.B

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INK JET MAINTENANCE SPIT PATTERN von TEUSSINK, Bart, GOLLATZ, Johannes A.T, GERAETS, Jacques J.M, LEUS, Gerhardus R.B, WIJNHEIJMER, Albertine P

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