Ca10Li(VO4)7:Nd3+, a promising laser material: growth, structure and spectral characteristics of a Czochralski-grown single crystal von Kosmyna, M.B., Nazarenko, B.P., Puzikov, V.M., Shekhovtsov, A.N., Paszkowicz, W., Behrooz, A., Romanowski, P., Yasukevich, A.S., Kuleshov, N.V., Demesh, M.P., Wierzchowski, W., Wieteska, K., Paulmann, C.

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Observation of individual dislocations in 6H and 4H SiC by means of back-reflection methods of X-ray diffraction topography von Wierzchowski, W., Wieteska, K., Balcer, T., Malinowska, A., Graeff, W., Hofman, W.

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Structural characterization of InxGa1-xAs/Inp layers under different stresses von BAK-MISIUK, J, ORLINSKA, K, KANIEWSKI, J, SHALIMOV, A, LUSAKOWSKA, E, MISIUK, A, MUSZALSKI, J, WIERZCHOWSKI, W, WIETESKA, K, GRAEFF, W

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Characterization of crystal lattice defects in calcium molybdate single crystals (CaMoO4) by means of X-ray diffraction topography von Wierzbicka, E., Malinowska, A., Wieteska, K., Wierzchowski, W., Lefeld-Sosnowska, M., Świrkowicz, M., Łukasiewicz, T., Paulmann, C.

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Synchrotron topographic evaluation of strain around craters generated by irradiation with X-ray pulses from free electron laser with different intensities von Wierzchowski, W., Wieteska, K., Sobierajski, R., Klinger, D., Pełka, J., Żymierska, D., Paulmann, C., Hau-Riege, S.P., London, R.A., Graf, A., Burian, T., Chalupský, J., Gaudin, J., Krzywinski, J., Moeller, S., Messerschmidt, M., Bozek, J., Bostedt, Ch

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High-resolution X-ray diffractometric, topographic and reflectometric studies of epitaxial layers on porous silicon destined for exfoliation von Mazur, K., Wieteska, K., Wierzchowski, W., Sarnecki, J., Lipiński, D., Brzozowski, A., Paulmann, C.

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X-ray study of gadolinium gallium garnet epitaxial layers containing divalent Co ions von Mazur, K., Sarnecki, J., Borysiuk, J., Wierzchowski, W., Wieteska, K., Turos, A.

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"Ghost" segregation pattern and ferroelectric domains in mixed calcium-strontium-barium niobates von Wierzchowski, W., Wieteska, K., Malinowska, A., Wierzbicka, E., Romaniec, M., Lefeld-Sosnowska, M., Świrkowicz, M., Łukasiewicz, T., Sakowska, H., Paulmann, C.

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Ion implantation of the 4H SiC epitaxial layers and substrates with 2MeV Se+ and 1MeV Al+ ions von Wierzchowski, W, Turos, A, Wieteska, K, Stonert, A, Ratajczak, R, Jowik, P, Wilhelm, R, Akhamadaliev, S, Mazur, K, Paulmann, C

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Properties of Lu3Al5O12, Lu3Al5O12:Pr, Lu3Al5O12:Pr,Mo, and (Lu1−xYx)3Al5O12:Pr scintillator crystals von Talik, E, Kusz, J, Guzik, A, Szubka, M, Balin, K, Kisielewski, J, Wierzchowski, W, Malinowska, A, Strojny-Nedza, A, Pajaczkowska, A, Drozdowski, W

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The reduction of the misfit dislocation in non-doped AlAs/GaAs DBRs von Jasik, A., Wierzchowski, W., Muszalski, J., Gaca, J., Wójcik, M., Pierściński, K.

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Investigation of structural defects in ytterbium doped calcium gadolinum aluminate crystals by means of the synchrotron and conventional diffraction topography von Wierzbicka, E., Malinowska, A., Wierzchowski, W., Härtwig, J., Tran Thi, T.N., Kisielewski, J., Mazur, K.

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Characterization of an Yb:LuVO4 single crystal using X-ray topography, high-resolution X-ray diffraction, and X-ray photoelectron spectroscopy von Paszkowicz, W., Romanowski, P., Bąk-Misiuk, J., Wierzchowski, W., Wieteska, K., Graeff, W., Iwanowski, R.J., Heinonen, M.H., Ermakova, O., Dąbkowska, H.

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Investigation of damage induced by intense femtosecond XUV pulses in silicon crystals by means of white beam synchrotron section topography von Wierzchowski, W., Wieteska, K., Klinger, D., Sobierajski, R., Pelka, J.B., Żymierska, D., Balcer, T., Chalupský, J., Gaudin, J., Hájková, V., Burian, T., Gleeson, A.J., Juha, L., Sinn, H., Sobota, D., Tiedtke, K., Toleikis, S., Tschentscher, T., Vyšín, L., Wabnitz, H., Paulmann, C.

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X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal von MALINOWSKA, A, LEFELD-SOSNOWSKA, M, WIETESKA, K, WIERZCHOWSKI, W, GRAEFF, W, PAJACZKOWSKA, A

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Transmission double–crystal synchrotron studies of synthetic diamond using the Haruta stereo–pairs technique von Moore, Moreton, Wierzchowski, W.

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Revealing the defects in electron-irradiated Czochralski silicon von Misiuk, A., Bak-Misiuk, J., Jung, W., Felba, J., Wierzchowski, W., Wieteska, K., Prujszczyk, M.

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X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses von Wierzchowski, W., Wieteska, K., Balcer, T., Klinger, D., Sobierajski, R., Żymierska, D., Chalupský, J., Hájková, V., Burian, T., Gleeson, A.J., Juha, L., Tiedtke, K., Toleikis, S., Vyšín, L., Wabnitz, H., Gaudin, J.

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X-ray synchrotron diffraction studies of III-V semiconductor compounds implanted with hydrogen von Wieteska, K., Wierzchowski, W., Graeff, W., Gawlik, G.

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Effect of annealing under stress on defect structure of Si–Ge von Misiuk, A., Abrosimov, N.V., Romanowski, P., Bak-Misiuk, J., Wnuk, A., Surma, B., Wierzchowski, W., Wieteska, K., Graeff, W., Prujszczyk, M.

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