Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect von Miller, D. A. B., Chemla, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W., Wood, T. H., Burrus, C. A.

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Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy von PETROFF, P. M, GOSSARD, A. C, WIEGMANN, W

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Quantization of the Hall effect in an anisotropic three-dimensional electronic system von STORMER, H. L, EISENSTEIN, J. P, GOSSARD, A. C, WIEGMANN, W, BALDWIN, K

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The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation von Miller, D., Chemla, D., Damen, T., Wood, T., Burrus, C., Gossard, A., Wiegmann, W.

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Toward quantum well wires: Fabrication and optical properties von Petroff, P. M., Gossard, A. C., Logan, R. A., Wiegmann, W.

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Room-temperature optical nonlinearities in GaAs von LEE, Y. H, CHAVEZ-PIRSON, A, WIEGMANN, W, KOCH, S. W, GIBBS, H. M, PARK, S. H, MORHANGE, J, JEFFERY, A, PEYGHAMBARIAN, N, BANYAI, L, GOSSARD, A. C

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Energy structure and quantized Hall effect of two-dimensional holes von STORMER, H. L, SCHLESINGER, Z, CHANG, A, TSUI, D. C, GOSSARD, A. C, WIEGMANN, W

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Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures von Ryan, J. F., Taylor, R. A., Turberfield, A. J., Maciel, Angela, Worlock, J. M., Gossard, A. C., Wiegmann, W.

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Heimatkunde des Fürstentums Schaumburg-Lippe, für Schule und Haus von Wiegmann, W

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Observation of intersubband scattering in a 2-dimensional electron system von Störmer, H.L., Gossard, A.C., Wiegmann, W.

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Effect of inversion symmetry on the band structure of semiconductor heterostructures von EISENSTEIN, J. P, STORMER, H. L, NARAYANAMURTI, V, GOSSARD, A. C, WIEGMANN, W

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Energy-loss rates for hot electrons and holes in GaAs quantum wells von JAGDEEP SHAH, PINCZUK, A, GOSSARD, A. C, WIEGMANN, W

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Optical Characterization of Interface Disorder in GaAs/Ga1--xAlxAs Multi-Quantum Well Structures von Weisbuch, C, Dingle, R, Gossard, A C, Wiegmann, W

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Optical bistability in semiconductors von Gibbs, H. M., McCall, S. L., Venkatesan, T. N. C., Gossard, A. C., Passner, A., Wiegmann, W.

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Highly anisotropic optical properties of single quantum well waveguides von WEINER, J. S, CHEMLA, D. S, MILLER, D. A. B, HAUS, H. A, GOSSARD, A. C, WIEGMANN, W, BURRUS, C. A

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Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides von WEINER, J. S, MILLER, D. A. B, CHEMLA, D. S, DAMEN, T. C, BURRUS, C. A, WOOD, T. H, GOSSARD, A. C, WIEGMANN, W

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Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration von Störmer, H. L., Gossard, A. C., Wiegmann, W., Baldwin, K.

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Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices von Störmer, H. L., Pinczuk, A., Gossard, A. C., Wiegmann, W.

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Direct Observation of Superlattice Formation in a Semiconductor Heterostructure von Dingle, R., Gossard, A. C., Wiegmann, W.

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X-ray diffraction study of interdiffusion and growth in (GaAs) n (AlAs) m multilayers von Fleming, R. M., McWhan, D. B., Gossard, A. C., Wiegmann, W., Logan, R. A.

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