Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 × 2) von Gustafsson, J.B., Moons, E., Widstrand, S.M., Johansson, L.S.O.

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Thin PTCDA films on Si(0 0 1): 1. Growth mode von Gustafsson, J.B., Moons, E., Widstrand, S.M., Johansson, L.S.O.

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Thin PTCDA films on Si(0 0 1): 2. Electronic structure von Gustafsson, J.B., Moons, E., Widstrand, S.M., Gurnett, M., Johansson, L.S.O.

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Investigation of surface structure related features in the multiple-scattering simulations of photoelectron diffraction of 3C–SiC(0 0 1)- c ( 4 × 2 ) von Stoltz, D., Stoltz, S.E., Widstrand, S.M., Johansson, L.S.O.

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Angle-resolved photoemission from stoichiometric GaN(0001)-1×1 von Widstrand, S.M., Magnusson, K.O., Johansson, L.S.O., Oshima, M.

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Angle-resolved photoemission from stoichiometric GaN(0001) -1 x 1 von Widstrand, S M, Magnusson, K O, Johansson, L S O, Oshima, M

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Core-Level Photoemission From Stoichiometric GaN (0001)-1x1 von Widstrand, S M, Magnusson, K O, Johansson, L S O, Moons, E, Gurnett, M, Oshima, M

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Preparation of stoichiometric GaN(0001)-1 x 1 studied with spectromicroscopy von WIDSTRAND, S. M, MAGNUSSON, K. O, LARSSON, M. I, JOHANSSON, L. S. O, GUSTAFSSON, J. B, MOONS, E, YEOM, H. W, MIKI, H, OSHIMA, M

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Angle-resolved photoemission study of the single-domain Si ( 111 ) ( 3 × 1 ) / ( 6 × 1 ) − Ag surface von Gurnett, M., Gustafsson, J. B., Magnusson, K. O., Widstrand, S. M., Johansson, L. S. O.

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Angle-resolved photoemission study of the hydrogenated 3C-SiC(001)-2 X 1-H surface von WIDSTRAND, S. M, JOHANSSON, L. S. O, MAGNUSSON, K. O, LARSSON, M. I, YEOM, H. W, HARA, S, YOSHIDA, S

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Preparation of stoichiometric GaN(0001)-1x1: an XPS study von Widstrand, S M, Magnusson, K O, Johansson, L S O, Moons, E, Gurnett, M, Yeom, H W, Miki, H, Oshima, M

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Core-level spectroscopy study of the Li/Si(111)-3×1, Na/Si(111)-3×1, and K/Si(111)-3×1 surfaces von GUMETT, M, GUSTAFSSON, J. B, HOLLEBOOM, L. J, MAGNUSSON, K. O, WIDSTRAND, S. M, JOHANSSON, L. S. O, JOHANSSON, M. K.-J, GRAY, S. M

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Core-Level Photoemission From Stoichiometric GaN(0001)-1×1 von Widstrand, S.M., Magnusson, K.O., Johansson, L.S.O., Moons, E., Gurnett, M., Oshima, M.

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17pWD-3 光電子回折によるエチレン及びベンゼン吸着Si(001)表面の構造解析 von 下村, 勝, 宗像, 学, 虻川, 匡司, 佐藤, 圭, 川和, 拓夫, 河野, 省三

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Preparation of stoichiometric GaN(0001)−1×1: an XPS study von Widstrand, S.M., Magnusson, K.O., Johansson, L.S.O., Moons, E., Gurnett, M., Yeom, H.W., Miki, H., Oshima, M.

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Preparation of stoichiometric GaN(0 0 0 1)-1 × 1 studied with spectromicroscopy von Widstrand, S.M., Magnusson, K.O., Larsson, M.I., Johansson, L.S.O., Gustafsson, J.B., Moons, E., Yeom, H.W., Miki, H., Oshima, M.

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Angle-resolved photoemission study of the hydrogenated 3C-SiC(0 0 1)-2×1-H surface von Widstrand, S.M, Johansson, L.S.O, Magnusson, K.O, Larsson, M.I, Yeom, H.W, Hara, S, Yoshida, S

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Structural analysis of the ethylene and benzene adsorbed Si(001) surface by photoelectron diffraction von Shimomura, M., Munakata, M., Abukawa, T., Sato, K., Kawawa, T., Widstrand, S. M., Kono, S.

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Core-level spectroscopy study of the Li/Si(111)-3 x 1, Na/Si(111)-3 x 1, and K/Si(111)-3 x 1 surfaces von Gurnett, M, Gustafsson, JB, Holleboom, LJ, Magnusson, KO, Widstrand, SM, Johansson, LSO, Johansson, M K-J, Gray, Struan

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H. WIDSTRAND, Palladius-Studien (Book Review) von Guillemin, A

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