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Advanced Thermophotovoltaic Devices for Space Nuclear Power Systems
Veröffentlicht in AIP conference proceedings
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Extinguishing by “slow quenching’’ in a thick grid Cs–Ba tacitron
Veröffentlicht in Journal of applied physics
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Ignition and extinguishing characteristics of Cs-Ba tacitron
Veröffentlicht in Journal of applied physics
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A steady-state model for a low-pressure Cs-Ba diode
Veröffentlicht in Journal of applied physics
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Molecular beam epitaxy grown 0.6 eV n ∕ p ∕ n In P As ∕ In Ga As ∕ In Al As double heterostructure thermophotovoltaic devices using carbonas the p -type dopant
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
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Molecular beam epitaxy grown 0.6 eV n ∕ p ∕ n In P As ∕ In Ga As ∕ In Al As double heterostructure thermophotovoltaic devices using carbon as the p -type dopant
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
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Molecular beam epitaxy grown 0.6eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
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