Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique von Shaw-Hung Gu, Tahui Wang, Wen-Pin Lu, Wenchi Ting, Ku, Y.-H.J., Chih-Yuan Lu

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Charge-based capacitance measurement for bias-dependent capacitance von Chang, Yao-Wen, Chang, Hsing-Wen, Lu, Tao-Cheng, King, Ya-Chin, Ting, Wenchi, Ku, Yen-Hui Joseph, Lu, Chih-Yuan

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A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications von YEH, Chih-Chieh, TAHUI WANG, TSAI, Wen-Jer, LU, Tao-Cheng, CHEN, Ming-Shiang, LIAO, Yi-Ying, WENCHI TING, KU, Yen-Hui Joseph, LU, Chih-Yuan

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A novel simple CBCM method free from charge injection-induced errors von Yao-Wen Chang, Hsing-Wen Chang, Chung-Hsuan Hsieh, Han-Chao Lai, Tao-Cheng Lu, Wenchi Ting, Ku, J., Chih-Yuan Lu

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Temperature effect on read current in a two-bit nitride-based trapping Storage Flash EEPROM cell von Mu-Yi Liu, Yao-Wen Chang, Zous, N.-K., Ichen Yang, Tao-Cheng Lu, Tahui Wang, Wenchi Ting, Ku, J., Chih-Yuan Lu

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A novel fully CMOS process compatible PREM for SOC applications von Yeh, C.C., Tahui Wang, Tsai, W.J., Lu, T.C., Liao, Y.Y., Zous, N.K., Chin, C.Y., Chen, Y.R., Chen, M.S., WenChi Ting, Chih-Yuan Lu

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Improved reliability characteristics of submicrometer nMOSFET's with oxynitride gate dielectric prepared by rapid thermal oxidation in N2O von HYUNSANG HWANG, WENCHI TING, DIM-LEE KWONG, LEE, J

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Insight of stress effect on the ONO stack layer in a sONOS-type flash memory cell von Yeh, C.C., Liao, Y.Y., Tahui Wang, Tsai, W.J., Lu, T.C., Kao, H.L., Ou, T.F., Chen, M.S., Chen, Y.J., Lai, E.K., Shih, Y.H., WenChi Ting, Ku, Y.H.J., Chih-Yuan Lu

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A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications von Yeh, C.C., Tahui Wang, Liao, Y.Y., Tsai, W.J., Lu, T.C., Chen, M.S., Chen, Y.R., Chen, K.F., Han, Z.T., Wong, M.S., Hsu, S.M., Zous, N.K., On, T.F., WenChi Ting, Kit, J., Chih-Yuan Lu

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A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O von HYUNSANG HWANG, WENCHI TING, DIM-LEE KWONG, LEE, J

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Method of forming strained-silicon wafer for mobility-enhanced MOSFET device von TING WENCHI, SHIH WONGNG

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Improved reliability characteristics of submicrometer nMOSFET's with oxynitride gate dielectric prepared by rapid thermal oxidation in N sub(2)O von Hwang, Hyunsang, Ting, Wenchi, Kwong, Dim-Lee, Lee, J

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METHOD FOR FABRICATING A HYBRID ISOLATION STRUCTURE von TING, WENCHI, HONG, GARY

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METHOD FOR FABRICATING A HYBRID ISOLATION STRUCTURE von TING WENCHI, HONG GARY

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Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate von SETHI, RAKESH, TING, WENCHI

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Method of forming strained-silicon wafer for mobility-enhanced MOSFET device von Ting, Wenchi, Shih, Wong-Cheng

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Method for fabricating a flash memory von TING WENCHI, CHEN HWI-HUANG

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Method for making metal capacitors with low leakage currents for mixed-signal devices von Ting, Wenchi, Shih, Wong-Cheng, Lee, Tzyh-Cheang, Lin, Chin-Hsien, Wong, Shyh-Chyi

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Method of forming crown-type MIM capacitor integrated with the CU damascene process von Shih, Wong-Cheng, Lee, Tzyh-Cheang, Ting, Wenchi, Lin, Chih-Hsien, Wong, Shyh-Chyi

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A novel silicon-nitride based light-emitting transistor (SiNLET): optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication... von Yeh, C.C., Tsai, W.J., Lu, T.C., Chen, Y.R., Pan, K.M., Gu, S.H., Liao, Y.Y., Kao, H.L., Ou, T.F., Zous, N.K., WenChi Ting, Tahui Wang, Ku, J., Chih-Yuan Lu

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