Heterojunction bipolar transistors implemented with GaInNAs materials von Asbeck, P M, Welty, R J, Tu, C W, Xin, H P, Welser, R E

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GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics von Mochizuki, K, Welty, R J, Asbeck, P M

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Carbonic anhydrase II deficiency syndrome in a Belgian family is caused by a point mutation at an invariant histidine residue (107 His→Tyr) : complete structure of the normal human... von VENTA, R. J, WELTY, R. J, JOHNSON, T. M, SLY, W. S, TASHIAN, R. E

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Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions von DeLuca, P.M., Lutz, C.R., Welser, R.E., Chi, T.Y., Huang, E.K., Welty, R.J., Asbeck, P.M.

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Design and performance of tunnel collector HBTs for microwave power amplifiers von Welty, R.J., Mochizuki, K., Lutz, C.R., Welser, R.E., Asbeck, P.M.

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Bandgap engineering of GaInNP on GaAs(001) for electronic applications von Tu, C.W., Hong, Y.G., Andre, R., Welty, R.J., Asbeck, P.M.

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Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs von Stevens, K.S., Welty, R.J., Welser, R.E., Landini, B.E., Asbeck, P.M., Shih-Chieh Hung, Wen-Pin Lu, Shun-Ching Feng

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GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage von Welty, R.J, Xin, H.P, Mochizuki, K, Tu, C.W, Asbeck, P.M

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GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates von Xin, H.P, Welty, R.J, Tu, C.W

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GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency... von Mochizuki, K., Welty, R.J., Asbeck, P.M., Lutz, C.R., Welser, R.E., Whitney, S.J., Pan, N.

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Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes von Xin, H.P, Welty, R.J, Hong, Y.G, Tu, C.W

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Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications von Pin-Fan Chen, Hsin, U.-M.T., Welty, R.J., Asbeck, P.M., Pierson, R.L., Zampardi, P.J., Ho, W.-J., Vincent Ho, M.C., Chang, M.F.

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Effects of Human Carbonic Anhydrase III (CA III) on Synovial and Muscle Fibroblast Glycosaminoglycan Metabolism von Cabral, A. R., Hewett-Emmett, D., Welty, R J-, Castor, C. W.

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A WIDESPREAD SILENT POLYMORPHISM OF HUMAN CARBONIC ANHYDRASE III (31 ILE harr VAL): IMPLICATIONS FOR EVOLUTIONARY GENETICS von Hewett-Emmett, David, Welty, Rosalind J, Tashian, Richard E

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Transfer of patterned ion-cut silicon layers von Yun, C. H., Wengrow, A. B., Cheung, N. W., Zheng, Y., Welty, R. J., Guan, Z. F., Smith, K. V., Asbeck, P. M., Yu, E. T., Lau, S. S.

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Tunnel collector GaInP/GaAs HBTs for microwave power amplifiers von Welty, R.J., Mochizuki, K., Lutz, C.R., Asbeck, P.M.

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Tube array heat transfer in fluidized beds a study of particle size effects von Chung, Tae-Yong, Welty, James R.

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GaInP/GaAs tunnel collector HBTs: base-collector barrier height analysis von Keogh, D.M., Welty, R.J., Lopez-Gonzalez, J., Lutz, C.R., Welser, R.E., Asbeck, P.M.

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Local heat transfer coefficients for a horizontal tube in a large-particle fluidized bed at elevated temperature von George, A. H., Welty, J. R.

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GaN 0.011 P 0.989 red light-emitting diodes directly grown on GaP substrates von Xin, H. P., Welty, R. J., Tu, C. W.

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