Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies von Melinger, J.S., Buchner, S., McMorrow, D., Stapor, W.J., Weatherford, T.R., Campbell, A.B., Eisen, H.

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Single event induced charge transport modeling of GaAs MESFETs von Weatherford, T.R., McMorrow, D., Curtice, W.R., Knudson, A.R., Campbell, A.B.

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Charge-collection mechanisms of heterostructure FETs von McMorrow, D., Melinger, J.S., Thantu, N., Campbell, A.B., Weatherford, T.R., Knudson, A.R., Lan Hu Tran, Peczalski, A.

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Historical perspective on radiation effects in III-V devices von Weatherford, T.R., Anderson, W.T.

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Laser confirmation of SEU experiments in GaAs MESFET combinational logic (for space application) von Schneiderwind, R., Krening, D., Buchner, S., Kang, K., Weatherford, T.R.

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Charge collection in GaAs MESFETs fabricated in semi-insulating substrates von Schwank, J.R., Sexton, F.W., Weatherford, T.R., McMorrow, D., Knudson, A.R., Melinger, J.S.

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SEU rate prediction and measurement of GaAs SRAMs onboard the CRRES satellite von Weatherford, T.R., McDonald, P.T., Campbell, A.B., Langworthy, J.B.

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Modeling single-event effects in a complex digital device von Clark, K.A., Ross, A.A., Loomis, H.H., Weatherford, T.R., Fouts, D.J., Buchner, S.P., McMorrow, D.

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SEU design considerations for MESFETs on LT GaAs von Weatherford, T.R., Radice, R., Eskins, D., Devers, J., Fouts, D.J., Marshall, P.W., Marshall, C.J., Dietrich, H., Twigg, M., Milano, R.

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Heavy ion and proton analysis of a GaAs C-HIGFET SRAM von Cutchin, J.H., Marshall, P.W., Weatherford, T.R., Langworthy, J., Petersen, E.L., Campbell, A.B., Hanka, S., Peczalski, A.

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Utilizing Low-Dose Transmission Electron Microscopy for Structure and Defect Identification in Group III - Nitride Electronic Devices von Specht, Petra, Luysberg, Martina, Chavez, J., Weatherford, T.R., Anderson, T.J., Koehler, A.D., Kisielowski, C.

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SEE analysis of digital InP-based HBT circuits at gigahertz frequencies von Weatherford, T.R., Schiefelbein, P.K.

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Single event upsets in gallium arsenide pseudo-complementary MESFET logic von Fouts, D.J., Weatherford, T.R., McMorrow, D., Wolfe, K., Van Dyk, S.E., Melinger, J.S., Tran, L.H., Campbell, A.B.

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Proton and heavy ion upsets in GaAs MESFET devices von Weatherford, T R, Tran, L, Stapor, W J, Petersen, E L, Langworthy, J B, McMorrow, D, Abdel-Kader, W G, McNulty, P J

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Comparisons of Single Event Vulnerability of GaAs SRAMS von Weatherford, T. R., Hauser, J. R., Diehl, S. E.

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Single-event phenomena in GaAs devices and circuits von McMorrow, D., Weatherford, T.R., Buchner, S., Knudson, A.R., Melinger, J.S., Lan Hu Tran, Campbell, A.B.

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(Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons von Anderson, Travis J, Koehler, Andrew D., Specht, Petra, Weaver, Brad D, Greenlee, Jordan D, Tadjer, Marko J, Hite, Jennifer K, Mastro, Michael A, Porter, Matthew, Wade, Michael, Dubon, Oscar, Luysberg, Martina, Hobart, Karl D, Weatherford, Todd R, Kub, Fritz J

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PMOS NBTI analysis of a 45nm CMOS-SOI process with nitrided gate dielectric von Geoghegan, K. B., Siddiqui, J. J., Weatherford, T. R.

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A Study of Single Events in GaAs SRAMs von Weatherford, T. R., Hauser, J. R., Diehl-Nagle, S. E.

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Absolute potential measurements inside microwave digital IC's using a micromachined photoconductive sampling probe von David, G., Thomas, S., Elliott, K.R., Tae-Yeoul Yun, Crites, M.H., Whitaker, J.F., Weatherford, T.R., Jobe, K., Meyer, S., Bustamante, M.J., Goyette, B.

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