Two-dimensional polarization doping of GaN heterojunction and its potential for realizing lateral p–n junction devices von Wang, Zeheng, Li, Liang

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Suboptimal capability of individual machine learning algorithms in modeling small-scale imbalanced clinical data of local hospital von Li, Gang, Li, Chenbi, Wang, Chengli, Wang, Zeheng

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Evaluating the Traditional Chinese Medicine (TCM) Officially Recommended in China for COVID-19 Using Ontology-Based Side-Effect Prediction Framework (OSPF) and Deep Learning von Wang, Zeheng, Li, Liang, Song, Miao, Yan, Jing, Shi, Junjie, Yao, Yuanzhe

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Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation von Chen, Xinghuan, He, Zhiyuan, Shi, Yijun, Wang, Zeheng, Wang, Fangzhou, Sun, Ruize, Chen, Yiqiang, Chen, Yuan, He, Liang, Lu, Guoguang, Chen, Wanjun, Liu, Chao, Zhang, Bo

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Advancing Precision Medicine: VAE Enhanced Predictions of Pancreatic Cancer Patient Survival in Local Hospital von Wang, Yuan, Li, Chenbi, Wang, Zeheng

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7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering von Zhou, Qi, Liu, Li, Zhang, Anbang, Bowen, Chen, Yang, Jin, Shi, Yuanyuan, Wang, Zeheng, Chen, Wanjun, Zhang, Bo

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Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications von Li, Chenbi, Chen, Xinghuan, Wang, Zeheng

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On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate von Wang, Zeheng, Wang, Zirui, Zhang, Zhenwei, Yang, Di, Yao, Yuanzhe

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Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors von Wang, Zeheng, Huang, Jing-Kai

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Approaching High-Accuracy Side Effect Prediction of Traditional Chinese Medicine Compound Prescription Using Network Embedding and Deep Learning von Wang, Zeheng, Li, Liang, Yan, Jing, Yao, Yuanzhe

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A FIN-LDMOS with Bulk Electron Accumulation Effect von Chen, Weizhong, Duan, Zubing, Zhang, Hongsheng, Han, Zhengsheng, Wang, Zeheng

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Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel von Chen, Xinghuan, Wang, Fangzhou, Wang, Zeheng, Huang, Jing-Kai

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Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench von Wang, Zeheng, Zhang, Zhenwei, Wang, Shengji, Chen, Chao, Wang, Zirui, Yao, Yuanzhe

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Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study von Wang, Zeheng

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Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors

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A Machine Learning-Assisted Model for GaN Ohmic Contacts Regarding the Fabrication Processes von Wang, Zeheng, Li, Liang, Yao, Yuanzhe

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High-κ perovskite membranes as insulators for two-dimensional transistors von Huang, Jing-Kai, Wan, Yi, Shi, Junjie, Zhang, Ji, Wang, Zeheng, Wang, Wenxuan, Yang, Ni, Liu, Yang, Lin, Chun-Ho, Guan, Xinwei, Hu, Long, Yang, Zi-Liang, Huang, Bo-Chao, Chiu, Ya-Ping, Yang, Jack, Tung, Vincent, Wang, Danyang, Kalantar-Zadeh, Kourosh, Wu, Tom, Zu, Xiaotao, Qiao, Liang, Li, Lain-Jong, Li, Sean

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An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps von Wang, Fangzhou, Chen, Wanjun, Sun, Ruize, Wang, Zeheng, Zhou, Qi, Zhang, Bo

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Approaching ultra-low turn-on voltage in GaN lateral diode von Wang, Zeheng, Yang, Di, Shi, Junjie, Yao, Yuanzhe

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An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode von Wang, Fangzhou, Wang, Zeheng, Chen, Wanjun, Sun, Ruize, Xu, Wenjun, Wang, Yang, Jia, Haiqiang, Zhang, Bo

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