3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination von Wang, Xuelun, Zhao, Xixi, Takahashi, Tokio, Ohori, Daisuke, Samukawa, Seiji

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A low-power nitriding technique utilizing a microwave-excited radical flow von Itagaki, Hirotomo, Hirose, Shingo, Kim, Jaeho, Ogura, Mutsuo, Wang, Xuelun, Nonaka, Atsushi, Ogiso, Hisato, Sakakita, Hajime

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Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication von Ohori, Daisuke, Ishihara, Takahiro, Wang, Xuelun, Endo, Kazuhiko, Hsieh, Tsau-Hua, Li, Yiming, Natori, Nobuhiro, Matsui, Kazuma, Samukawa, Seiji

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High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure von Zhang, Kexiong, Takahashi, Tokio, Ohori, Daisuke, Cong, Guangwei, Endo, Kazuhiko, Kumagai, Naoto, Samukawa, Seiji, Shimizu, Mitsuaki, Wang, Xuelun

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Damage-Free Neutral Beam Etching for GaN Micro-LEDs Processing von Wang, Xuelun, Samukawa, Seiji

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Enhancement of light extraction efficiency by evanescent wave coupling effect in AlGaInP light-emitting diodes von Hao, Guodong, Wang, Xuelun

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Fabrication of GaN micro hexagonal frustum for high directional micro-LED (2) von Kumagai, Naoto, Takahashi, Tokio, Cong, Guangwei, Wang, Xuelun, Satoshi, Misato

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Fabrication of GaN micro hexagonal frustum for high directional u-LED von Kumagai, Naoto, Takahashi, Tokio, Cong, Guangwei, Wang, Xuelun, Shimizu, Misato

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Fabrication of microscopic light emitting structure for high-directional micro-LED by selective area growth von Kumagai, Naoto, Takahashi, Tokio, Cong, Guangwei, Wang, Xuelun, Satoshi, Misato

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Study on nitriding technique with quasi-atmospheric pressure utilizing a microwave excited nitrogen-based radical flow von Itagaki, Hirotomo, Hirose, Shingo, Kim, Jaeho, Wang, Xuelun, Kumagai, Naoto, Ogiso, Hisato, Sakakita, Hajime

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Aluminum alloy door and window for fabricated building von WANG XUELUN, WANG ZHUO

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Novel artificial intelligence opened aluminum alloy window von WANG XUELUN, WANG ZHUO

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Reacive Etching of InGaN with HI Neutral-Beam Etching von Sawada, Takahiro, Ishihara, Takahiro, Ohori, Daisuke, Wang, XueLun, Samukawa, Seiji

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Semiconductor light emitting diode von WANG XUELUN, OGURA MUTSUO

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Enhanced luminescence from the disordered quantum-wire superlattice von Sasaki, Akio, Okanishi, Ryohei, Liu, Xinquan, Wang, Xuelun, Ogura, Mutsuo

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Multifunctional general safety integrated well seat cover von LEI GUIQUN, WANG XUELUN, YE HAIFEI

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Semiconductor Light Emitting Diode von WANG XUELUN, OGURA MUTSUO

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High-voltage system rapid protection system and method based on network system von BAO WENXUE, WANG XUELUN, LIU PENG, WANG SHAOLI, ZHANG GUANGJI, WANG KAI, LI JINGYE

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VERFAHREN UND VORRICHTUNG ZUM HERSTELLEN EINER STICKSTOFFVERBINDUNG von Wang, Xuelun, Sakakita, Hajime, Kim, Jaeho, Kumagai, Naoto, Yamada, Hisashi, Shimizu, Tetsuji

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TWI848396B von KIM, JAEHO, SHIMIZU, TETSUJI, KUMAGAI, NAOTO, YAMADA, HISASHI, WANG, XUELUN, SAKAKITA, HAJIME

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