Concentric gravity waves over northern China observed by an airglow imager network and satellites von Xu, Jiyao, Li, Qinzeng, Yue, Jia, Hoffmann, Lars, Straka III, William C., Wang, Cuimei, Liu, Mohan, Yuan, Wei, Han, Sai, Miller, Steven D., Sun, Longchang, Liu, Xiao, Liu, Weijun, Yang, Jing, Ning, Baiqi

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Experience of a modified chest tube suture-fixation technique in uniportal thoracoscopic pulmonary resection von Shi, Wensong, Hu, Yuzhui, Wang, Cuimei, Chang, Guotao, Zheng, Huiyu, Yang, Zhiqiang, Yang, Yulun, Zhao, Xiaogang, Li, Xiangnan

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Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer von Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo

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Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers von Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo

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Simulation of In0.65Ga0.35 N single-junction solar cell von Zhang, Xiaobin, Wang, Xiaoliang, Xiao, Hongling, Yang, Cuibai, Ran, Junxue, Wang, Cuimei, Hou, Qifeng, Li, Jinmin

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Two-dimensional electron and hole gases in InxGa1−xN/AlyGa1−yN/GaN heterostructure for enhancement mode operation von Junda, Yan, Wang, Quan, Qu Shenqi, Xiao Hongling, Peng Enchao, He, Kang, Wang Cuimei, Feng, Chun, Yin Haibo, Jiang Lijuan, Li Baiquan, Wang, Zhanguo, Hou Xun

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Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1−xN/AlN)MQWs/GaN high electron mobility transistor von Li, Wei, Wang, Xiaoliang, Qu, Shenqi, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Peng, Enchao, Hou, Xun, Wang, Zhanguo

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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer von Pan, Xu, Wei, Meng, Yang, Cuibai, Xiao, Hongling, Wang, Cuimei, Wang, Xiaoliang

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Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell von Li, Zhidong, Xiao, Hongling, Wang, Xiaoliang, Wang, Cuimei, Deng, Qingwen, Jing, Liang, Ding, Jieqin, Hou, Xun

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Theoretical study on InxGa1-xN/GaN quantum dots solar cell von Deng, Qingwen, Wang, Xiaoliang, Yang, Cuibai, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Hou, Qifeng, Li, Jinmin, Wang, Zhanguo, Hou, Xun

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Theoretical design and performance of InxGa1−xN two-junction solar cells von Zhang, Xiaobin, Wang, Xiaoliang, Xiao, Hongling, Yang, Cuibai, Ran, Junxue, Wang, Cuimei, Hou, Qifeng, Li, Jinmin, Wang, Zhanguo

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AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD von Wang, Xiaoliang, Hu, Guoxin, Ma, Zhiyong, Ran, Junxue, Wang, Cuimei, Xiao, Hongling, Tang, Jian, Li, Jianping, Wang, Junxi, Zeng, Yiping, Li, Jinmin, Wang, Zhanguo

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Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures von Ding, Jieqin, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan

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Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy von Pan, Xu, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yang, Cuibai, Li, Wei, Wang, Weiying, Jin, Peng, Wang, Zhanguo

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Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier von Kong, Xin, Wei, Ke, Liu, Guoguo, Liu, Xinyu, Wang, Cuimei, Wang, Xiaoliang

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The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD von 井亮 肖红领 王晓亮 王翠梅 邓庆文 李志东 丁杰钦 王占国 侯洵

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Comparison of as-grown and annealed GaN/InGaN: Mg samples von Deng, Qingwen, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Lin, Defeng, Jiang, Lijuan, Feng, Chun, Li, Jinmin, Wang, Zhanguo, Hou, Xun

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The influence of Fe doping on the surface topography of GaN epitaxial material von Cui, Lei, Yin, Haibo, Jiang, Lijuan, Wang, Quan, Feng, Chun, Xiao, Hongling, Wang, Cuimei, Gong, Jiamin, Zhang, Bo, Li, Baiquan, Wang, Xiaoliang, Wang, Zhanguo

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Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) von Wei, Meng, Wang, Xiaoliang, Pan, Xu, Xiao, Hongling, Wang, CuiMei, Hou, Qifeng, Wang, Zhanguo

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Numerical optimization of carrier confinement characteristics in (AlxGa1−xN/AlN)SLs/GaN heterostructures von Ding, Jieqin, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan

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