A study on wood beams strengthened by FRP composite materials von Li, Yeou-Fong, Tsai, Ming-Jer, Wei, Ting-Fang, Wang, Wei-Chou

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Advanced RF IV Waveform Engineering Tool for Use in Device Technology Optimization: RF Pulsed Fully Active Harmonic Load Pull with Synchronized 3eV Laser von Casbon, M. A., Tasker, P. J., Wei-Chou Wang, Che-Kai Lin, Wen-Kai Wang, Wohlmuth, W.

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Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor von Liu, Wen-Chau, Pan, Hsi-Jen, Wang, Wei-Chou, Thei, Kong-Beng, Lin, Kwun-Wei, Yu, Kuo-Hui, Cheng, Chin-Chuan

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Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors von Lour, Wen-Shiung, Chang, Wen-Lung, Liu, Wen-Chau, Shie, Yung-Hsin, Pan, Hsi-Jen, Chen, Jing-Yuh, Wang, Wei-Chou

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Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications von Liu, Wen-Chau, Wang, Wei-Chou, Pan, Hsi-Jen, Chen, Jing-Yuh, Cheng, Shiou-Ying, Lin, Kun-Wei, Yu, Kuo-Hui, Thei, Kong-Beng, Cheng, Chin-Chuan

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A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices von Liu, Wen-Chau, Thei, Kong-Beng, Wang, Wei-Chou, Pan, Hsi-Jen, Wuu, Shou-Gwo, Lei, Ming-Ta, Wang, Chung-Shu, Cheng, Shiou-Ying

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Culture heritage and identity – some cases in Taiwan on the protection of cultural heritage von Wang, R. W.-C.

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A novel InP/InAlGaAs negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) with interesting topee-shaped current-voltage characteristics von Liu, Wen-Chau, Wang, Wei-Chou, Chen, Jing-Yuh, Pan, Hsi-Jen, Cheng, Shiou-Ying, Thei, Kong-Beng, Chang, Wen-Lung

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AlGaN/GaN HEMT development targeted for X-band applications von Wohlmuth, Walter, Ming-Hung Weng, Che-Kai Lin, Jhih-Han Du, Shin-Yi Ho, Tung-Yao Chou, Shuan-Ming Li, Huang, Clement, Wei-Chou Wang, Wen-Kai Wang

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Investigation of a step-doped-channel negative-differential-resistance transistor von LAIH, L.-W, CHENG, S.-Y, LIN, K.-W, LIN, P.-H, CHEN, J.-Y, WANG, W.-C, LIU, W.-C

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InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) von Liu, Wen-Chau, Cheng, Shiou-Ying, Tsai, Jung-Hui, Lin, Po-Hung, Chen, Jing-Yuh, Wang, Wei-Chou

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Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors von Pan, Hsi-Jen, Wang, Wei-Chou, Thei, Kong-Beng, Cheng, Chin-Chuan, Yu, Kuo-Hui, Lin, Kun-Wei, Wu, Cheng-Zu, Liu, Wen-Chau

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On the multiple negative-differential-resistance (MNDR) InGaP-GaAs resonant tunneling bipolar transistors von Liu, Wen-Chau, Pan, Hsi-Jen, Wang, Wei-Chou, Feng, Shun-Ching, Lin, Kun-Wei, Yu, Kuo-Hui, Laih, Lih-Wen

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Innovations in SiC Backside Processing and Manufacturing for GaN/SiC Products von Weng, Ming Hung, Du, Jhih Han, Cho, I Te, Wang, Yao Hsien, Chang, Yu Wei, Wei, Yi Feng, Chen, Chao Hao, Wohlmuth, Walter, Huang, Shih Hui, Wang, Wei Chou

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A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's) von Chen, Chun-Yuan, Wang, Wei-Chou, Chiou, Wen-Hui, Wang, Chih-Kai, Chuang, Hung-Ming, Cheng, Shiou-Ying, Liu, Wen-Chau

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Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor von Wang, Wei-Chou, Pan, Hsi-Jen, Thei, Kong-Beng, Lin, Kun-Wei, Yu, Kuo-Hui, Cheng, Chin-Chuan, Laih, Lih-Wen, Cheng, Shiou-Ying, Liu, Wen-Chau

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Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor von Cheng, Shiou-Ying, Liu, Wen-Chau, Chang, Wen-Lung, Pan, Hsi-Jen, Wang, Wei-Chou, Chen, Jing-Yuh, Feng, Shun-Ching, Yu, Kuo-Hui

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Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor von Pan, Hsi-Jen, Feng, Shun-Ching, Wang, Wei-Chou, Lin, Kun-Wei, Yu, Kuo-Hui, Wu, Cheng-Zu, Laih, Lih-Wen, Liu, Wen-Chau

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Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors von Liu, Wen-Chau, Pan, Hsi-Jen, Cheng, Shiou-Ying, Wang, Wei-Chou, Chen, Jing-Yuh, Feng, Shun-Ching, Yu, Kuo-Hui

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A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D3HBT) von CHENG, S.-Y, WANG, W.-C, CHANG, W.-L, CHEN, J.-Y, PAN, H.-J, LIU, W.-C

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