Variation in functional pelvic tilt in patients undergoing total hip arthroplasty von Pierrepont, J, Hawdon, G, Miles, B P, Connor, B O', Baré, J, Walter, L R, Marel, E, Solomon, M, McMahon, S, Shimmin, A J

Volltext

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule von Quayle, Paul C., Blanton, Eric W., Punya, Atchara, Junno, Grant T., He, Keliang, Han, Lu, Zhao, Hongping, Shan, Jie, Lambrecht, Walter R. L., Kash, Kathleen

Volltext

Buckled honeycomb antimony: Higher order topological insulator and its relation to the Kekulé lattice von Radha, Santosh Kumar, Lambrecht, Walter R. L.

Volltext

V2O5: A 2D van der Waals Oxide with Strong In-Plane Electrical and Optical Anisotropy von Sucharitakul, Sukrit, Ye, Gaihua, Lambrecht, Walter R. L, Bhandari, Churna, Gross, Axel, He, Rui, Poelman, Hilde, Gao, Xuan P. A

Volltext

Intestinal anastomotic healing models during experimental colitis von Miltschitzky, J. R. E., Clees, Z., Weber, M.-C., Vieregge, V., Walter, R. L., Friess, H., Reischl, S., Neumann, P.-A.

Volltext

Which electronic structure method for the study of defects: A commentary von Lambrecht, Walter R. L.

Volltext

Systematic study of the exchange interactions in Gd-doped GaN containing N interstitials, O interstitials, or Ga vacancies von Thiess, Alexander, Blügel, Stefan, Dederichs, Peter H., Zeller, Rudolf, Lambrecht, Walter R. L.

Volltext

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping von Boonchun, Adisak, Lambrecht, Walter R. L.

Volltext

Author Correction: Delocalization of dark and bright excitons in flat-band materials and the optical properties of V2O5 von Gorelov, Vitaly, Reining, Lucia, Feneberg, Martin, Goldhahn, Rüdiger, Schleife, André, Lambrecht, Walter R. L., Gatti, Matteo

Volltext

Comment on "Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping" by W. Lin, J. Kang et al. , Phys. Chem. Chem... von Lambrecht, Walter R L

Volltext

Electronic and lattice dynamical properties of II-IV-N2 semiconductors von Punya, Atchara, Paudel, Tula R., Lambrecht, Walter R. L.

Volltext

Delocalization of dark and bright excitons in flat-band materials and the optical properties of V2O5 von Gorelov, Vitaly, Reining, Lucia, Feneberg, Martin, Goldhahn, Rüdiger, Schleife, André, Lambrecht, Walter R. L., Gatti, Matteo

Volltext

Critical evaluation of the LDA + U approach for band gap corrections in point defect calculations: The oxygen vacancy in ZnO case study von Boonchun, Adisak, Lambrecht, Walter R. L.

Volltext

First-principles study of point defects in LiGaO2 von Boonchun, Adisak, Dabsamut, Klichchupong, Lambrecht, Walter R. L.

Volltext

Electronic structure and magnetism of europium chalcogenides in comparison with gadolinium nitride von Larson, Paul, Lambrecht, Walter R L

Volltext

Native defects and their complexes in spinel LiGa5O8 von Dabsamut, Klichchupong, Takahashi, Kaito, Lambrecht, Walter R. L.

Volltext

Effects of the van der Waals Interactions on Structural and Electronic Properties of CH3NH3(Pb,Sn)(I,Br,Cl)3 Halide Perovskites von Pandech, Narasak, Kongnok, Thanundon, Palakawong, Nirawith, Limpijumnong, Sukit, Lambrecht, Walter R. L, Jungthawan, Sirichok

Volltext

First-principles study of n- and p-type doping opportunities in LiGaO2 von Dabsamut, Klichchupong, Boonchun, Adisak, Lambrecht, Walter R L

Volltext

Band alignment of III-N, ZnO and II–IV-N 2 semiconductors from the electron affinity rule von Lyu, Sai, Lambrecht, Walter R L

Volltext

Computational study of electron paramagnetic resonance parameters for Mg and Zn impurities in β-Ga2O3 von Skachkov, Dmitry, Lambrecht, Walter R. L.

Volltext