Flat-band potentials of GaN and InGaN/GaN QWs by bias-dependent photoluminescence in electrolyte solution von Kobayashi, Naoki, Morita, Ryusuke, Narumi, Toru, Yamamoto, Jun, Ban, Yuzaburo, Wakao, Kiyohide

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Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy von Nitta, Shugo, Yamamoto, Jun, Koyama, Yoshihisa, Ban, Yuzaburoh, Wakao, Kiyohide, Takahashi, Kiyoshi

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Well width dependence of threshold current density in tensile-strained InGaAs/IngaAsP quantum-well lasers von YAMAMOTO, T, NOBUHARA, H, TANAKA, K, INOUE, T, FUJII, T, WAKAO, K

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Separate-confinement heterostructure dependence of the effective carrier recombination coefficient of strained InGaAs/InGaAsP multiple quantum well lasers von ODAGAWA, T, NAKAJIMA, K, TANAKA, K, NOBUHARA, H, INOUE, T, OKAZAKI, N, WAKAO, K

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p-GaN Cathode Degradation Correlated with Hydrogen Passivation during Water Photolysis under UV Light von Takagi, Daigo, Narumi, Toru, Kobayashi, Naoki, Yamamoto, Jun, Ban, Yuzaburo, Wakao, Kiyohide

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Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy von UEDA, O, WAKAO, K, KOMIYA, S, YAMAGUCHI, A, ISOZUMI, S, UMEBU, I

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Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers von UEDA, O, WAKAO, K, YAMAGUCHI, A, ISOZUMI, S, KOMIYA, S

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Applications of optical integrated circuits to signal processing: Semiconductor Optical Functional Devices von WAKAO, Kiyohide

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Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm Wavelength von Moriki, Kazunori, Wakao, Kiyohide, Kitamura, Mitsuhiro, Iga, Kenichi, Suematsu, Yasuharu

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Applications of optical integrated circuits to signal processing von WAKAO, Kiyohide

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Relaxation and Delay in Oscillations of GaInAsP/InP DH-Lasers von Wakao, Kiyohide, Morita, Hideki, Kambayashi, Toshio, Iga, Kenichi

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Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3 µm Wavelength von Moriki, Kazunori, Wakao, Kiyohide, Kitamura, Mitsuhiro, Iga, Kenichi, Suematsu, Yasuharu

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GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors von Iga, Kenichi, Kambayashi, Toshio, Wakao, Kiyohide, Sakamoto, Yasuo

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GaInAsP/InP DH Laser Grown by Newly Designed Vertical LPE Furnace von Wakao, Kiyohide, Moriki, Kazunori, Kambayashi, Toshio, Iga, Kenichi

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Semiconductor optical active devices for photonic networks von Wakao, Kiyohide, Soda, Haruhisa, Kotaki, Yuji

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Low threshold current density 1.3-μm strained-layer quantum-well lasers using n-type modulation doping von Yamamoto, T., Watanabe, T., Ide, S., Tanaka, I., Nobuhara, H., Wakao, K.

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A tunable wavelength-conversion laser von Kondo, K., Kuno, M., Yamakoshi, S., Wakao, K.

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LIGHT SELF-ROUTING DEVICE von WAKAO KIYOHIDE

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LIGHT INTENSITY/WAVELENGTH CONVERTING DEVICE von WAKAO KIYOHIDE

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OPTICAL SWITCH von WAKAO KIYOHIDE

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