A non-boundary-fitted-grid method, based on compact integrated-RBF approximations, for solving differential problems in multiply-connected domains von Le, T.T.V., Mai-Duy, N., Le-Cao, K., Bordas, S., Vu, D.P., Tran-Cong, T.

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Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers von Tatavarti, Rao, Hillier, G., Dzankovic, A., Martin, G., Tuminello, F., Navaratnarajah, R., Du, G., Vu, D.P., Pan, N.

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High reliability InGaP/GaAs HBT von Pan, N., Elliott, J., Knowles, M., Vu, D.P., Kishimoto, K., Twynam, J.K., Sato, H., Fresina, M.T., Stillman, G.E.

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High performance Al/sub 0.35/Ga/sub 0.65/As/GaAs HBT's von Welser, R.E., Pan, N., Lutz, C.R., Vu, D.P., Zampardi, P.J., Pierson, R.L., McDermott, B.T.

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High performance Al0.35Ga0.65As/GaAs HBT's von Welser, R.E, Pan, N, Lutz, C.R, Vu, D.P, Zampardi, P.J, Pierson, R.L, McDermott, B.T

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An SOI-based three-dimensional integrated circuit technology von Burns, J., McIlrath, L., Hopwood, J., Keast, C., Vu, D.P., Warner, K., Wyatt, P.

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Creating 3D circuits using transferred films von Sailer, P.M., Singhal, P., Hopwood, J., Kaeli, D.R., Zavracky, P.M., Warner, K., Vu, D.P.

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High quality silicon-on-insulator structures formed by oxygen implantation and annealing von Vu, D.P., Haond, Marjorie, d'Anterroches, C., Oberlin, J.C., Golanski, A., Grob, J.J., Maillet, S.

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High gain AlGaAs/GaAs HBTs grown by MOCVD von Welser, R.E., Pan, N., Vu, D.P., Knowles, M.A., Taulananda, I., Miller, J.G., Stillman, G.E.

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Advances in recrystallization technology von Zavracky, P.M., Allen, L., Vu, D.P., Batty, M.

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Recombination lifetime measurements in SOI materials using a depletion-mode MOSFET von Vu, D.P., Henderson, W.R., Zavracky, P.M., Cheong, N.K.

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First-principles investigation of structural, elastic, thermodynamic, electronic and optical properties of lead-free double perovskites halides: Cs2LiYX6 (X = Br, I) von Al-Qaisi, Samah, Rai, D.P., Haq, Bakhtiar Ul, Ahmed, R., Vu, Tuan V., Khuili, M., Tahir, Sohail Afzal, Alhashim, Hala H.

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Magnetic phase transition in La0.8Sr0.2Mn0.9Sb0.1O3 manganite under pressure von Kichanov, S.E., Kozlenko, D.P., Khiem, L.H., Nghia, N.X., Lieu, N.T.T., Vu, M.T., Lukin, E.V., Khan, D.T., Tuan, N.Q., Savenko, B.N., Dang, N.T.

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Mechanical and thermodynamical properties of Fe2CoAl a full-Heusler alloy under hydrostatic pressure: A DFT study von Joshi, H., Vu, Tuan V., Hieu, Nguyen N., Khenata, R., Rai, D.P.

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Promising optoelectronic response of 2D monolayer MoS2: A first principles study von Rai, D.P., Vu, Tuan V., Laref, Amel, Joshi, H., Patra, P.K.

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Electronic, magnetic and optical properties of monolayer (ML) hexagonal ZnSe on vacancy defects at Zn sites from DFT-1/2 approach von Rai, D.P., Laref, Amel, Khuili, M., Al-Qaisi, Samah, Vu, Tuan V., Vo, Dat D.

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A DFT study of electronic, magnetic, optical and transport properties of rare earth element (Gd, Sm)-doped GaN material von Maskar, E., Lamrani, A. Fakhim, Belaiche, M., Es-Smairi, A., Vu, Tuan V., Rai, D.P.

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Induced ferromagnetism in bilayer hexagonal Boron Nitride (h-BN) on vacancy defects at B and N sites von Chettri, B., Patra, P.K., Vu, Tuan V., Nguyen, Cuong Q., Lalrinkima, Yaya, Abu, Obodo, Kingsley O., Tran, Ngoc Thanh Thuy, Laref, A., Rai, D.P.

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Electronic, magnetic, optical and transport properties of wurtzite-GaN doped with rare earth (RE= Pm, Sm, and Eu): First principles approach von Maskar, E., Lamrani, A. Fakhim, Belaiche, M., Es-Smairi, A., Khuili, M., Al-Qaisi, Samah, Vu, Tuan V., Rai, D.P.

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Pressure induced antiferromagnetism in the manganite La0.7Sr0.3Mn0.83Nb0.17O3 von Vu, M.T., Kozlenko, D.P., Kichanov, S.E., Troyanchuk, I.O., Lukin, E.V., Khiem, L.H., Savenko, B.N.

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