Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process von VONCKEN, M. M. A. J, SCHERMER, J. J, BAUHUIS, G. J, MULDER, P, LARSEN, P. K

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Thin film GaAs solar cells with increased quantum efficiency due to light reflection von Bauhuis, G.J., Schermer, J.J., Mulder, P., Voncken, M.M.A.J., Larsen, P.K.

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Influence of radius of curvature on the lateral etch rate of the weight induced epitaxial lift-off process von Voncken, M.M.A.J, Schermer, J.J, Maduro, G, Bauhuis, G.J, Mulder, P, Larsen, P.K

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Epitaxial Lift-Off for large area thin film III/V devices von Schermer, J. J., Mulder, P., Bauhuis, G. J., Voncken, M. M. A. J., van Deelen, J., Haverkamp, E., Larsen, P. K.

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Quantitative analysis of variant III CuAu-I-type ordering of Al x Ga 1− x As on (1 1 0), (1 1 1)A and (0 0 1) GaAs substrates using X-ray diffraction von van Niftrik, A.T.J., Bauhuis, G.J., Schermer, J.J., Kim, H.J., Voncken, M.M.A.J., Mulder, P., Larsen, P.K.

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Quantitative analysis of variant III CuAu-I-type ordering of AlxGa1-xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction von VAN NIFTRIK, A. T. J, BAUHUIS, G. J, SCHERMER, J. J, KIM, H. J, VONCKEN, M. M. A. J, MULDER, P, LARSEN, P. K

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Synchrotron radiation study of order in AlxGa1−xAs von van Niftrik, A.T.J., Bauhuis, G.J., Schermer, J.J., Kim, H.J., Voncken, M.M.A.J., Mulder, P., Larsen, P.K.

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Etching AlAs with HF for epitaxial lift-off applications von Voncken, M.M.A.J, Schermer, J.J, van Niftrik, A.T.J, Bauhuis, G.J, Mulder, P, Larsen, P.K, Peters, T.P.J, de Bruin, B, Klaassen, A, Kelly, J.J

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Influence of base thickness on front and back side efficiency of thin film GaAs solar cells von Bauhuis, G.J., Mulder, P., Schermer, J.J., Voncken, M.M.A.J., Larsen, P.K.

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