Analytical, optical and electrophysical investigations of TiB x–GaAs interface von Dmitruk, N.L, Ermolovich, I.B, Fursenko, O.V, Konakova, R.V, Milenin, V.V, Voitsikhovskyi, D.I, Yastrubchak, O.B

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Analytical, optical and electrophysical investigations of TiBx–GaAs interface von Dmitruk, N.L, Ermolovich, I.B, Fursenko, O.V, Konakova, R.V, Milenin, V.V, Voitsikhovskyi, D.I, Yastrubchak, O.B

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On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts von DMITRUK, N. L, ERMOLOVICH, I. B, IVANOV, V. N, KONAKOVA, R. V, LYTVYN, O. S, LYTVYN, P. M, MILENIN, V. V, PROKOPENKO, I. V, VENGER, E. F, VOITSIKHOVSKYI, D. I, BOLTOVETS, N. S

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On the nature of transition layer and heat tolerance of TiB x/GaAs-based contacts von Dmitruk, N.L., Ermolovich, I.B., Konakova, R.V., Lytvyn, O.S., Lytvyn, P.M., Milenin, V.V., Prokopenko, I.V., Venger, E.F., Voitsikhovskyi, D.I., Boltovets, N.S., Ivanov, V.N.

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Experimental studies of microwave oscillator modules based on Si IMPATT diodes von Basanets, V.V., Boltovets, N.S., Zorenko, A.V., Belyaev, A.E., Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I.

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Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing von Atanassova, E., Boltovets, N.S., Kolyadina, E.Yu, Konakova, R.V., Koprinarova, J., Matveeva, L.A., Milenin, V.V., Mitin, V.F., Shynkarenko, V.V., Voitsikhovskyi, D.I.

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Microwave oscillators on the basis of silicon IMPATT diodes used in the mm-band integrated circuits von Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I.

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Nonuniformities in metal-semiconductor contacts von Chaika, G.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Voitsikhovskyi, D.I., Boltovets, N.S., Ivanov, V.N.

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Interdiffusion and reactions in Pd-Si heteropairs von Boltovets, N.S., Beketov, G.K., Belyaev, A.E., Konakova, R.V., Milenin, V.V., Senkevich, A.I., Voitsikhovskyi, D.I.

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