Infrared study of the structure of silicon oxynitride films produced by plasma enhanced chemical vapor deposition von Lisovskyy, I.P., Voitovych, M.V., Sarikov, A.V., Zlobin, S.O., Lukianov, A.N., Oberemok, O.S., Dubikovsky, O.V.

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Effect of Tin on the processes of Silicon-nanocrystal formation in Amorphous Si[O.sub.x] thin-film matrices von Voitovych, V.V, Rudenko, R.M, Kolosiuk, A.G, Krasko, M.M, Juhimchuk, V.O, Voitovych, M.V, Ponomarov, S.S, Kraitchinskii, A.M, Povarchuk, V. Yu, Makara, V.A

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Effect of Tin on Structural Transformations in the Thin-Film Silicon Suboxide Matrix von Voitovych, V.V., Rudenko, R.M., Yuchymchuk, V.O., Voitovych, M.V., Krasko, M.M., Kolosiuk, A.G., Povarchuk, V.Yu, Khachevich, I.M., Rudenko, M.P.

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Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin von Rudenko, R.M., Kras’ko, M.M., Voitovych, V.V., Kolosyuk, A.G., Povarchuk, V.Yu, Kraichynskyi, A.M., Yukhymchuck, V.O., Bratus’, V.Ya, Voitovych, M.V., Zaloilo, I.A.

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