Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth von Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

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Quantitative Auger electron spectroscopy of SiC von Kosiba, R., Liday, J., Ecke, G., Ambacher, O., Breza, J., Vogrinčič, P.

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Stable fluoride based sputtering target for Tl-based cuprate superconducting thin film fabrication von Sojková, M., Štrbík, V., Chromik, Š., Liday, J., Vogrinčič, P., Dobročka, E., Španková, M., Talacko, M., Gaži, Š.

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Preparation and structural properties of YBCO films grown on GaN/ c-sapphire hexagonal substrate von Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbík, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J.P.

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Investigation of NiO x -based contacts on p-GaN von Liday, J., Hotový, I., Sitter, H., Vogrinčič, P., Vincze, A., Vávra, I., Šatka, A., Ecke, G., Bonanni, A., Breza, J., Simbrunner, C., Plochberger, B.

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Nb-Ti/Al/Ni/Au based ohmic contacts to AlGaN/GaN von Vanko, G., Lalinský, T., Mozolová, Ž., Liday, J., Vogrinčič, P., Vincze, A., Uherek, F., Haščík, Š., Kostič, I.

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Investigation of NiOx-based contacts on p-GaN von Liday, J., Hotový, I., Sitter, H., Vogrinčič, P., Vincze, A., Vávra, I., Šatka, A., Ecke, G., Bonanni, A., Breza, J., Simbrunner, C., Plochberger, B.

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A computer controlled chemical bevel etching apparatus: applications to Auger analysis of multi-layered structures von El-Gomati, M, Gelsthorpe, A, Srnanek, R, Liday, J, Vogrincic, P, Kovac, J

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Iridium-based multilayer contacts to n-GaAs von Lalinský, T, Breza, J, Vogrinčič, P, Osvald, J, Mozolová, Ž, Šišolák, J

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Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N2 and O2 + N2 ambients von LIDAY, J, HOTOVY, I, SITTER, H, SCHNLIDEGG, K, VOGRINDID, P, BONNANI, A, BREZA, J, ECKE, G, VIVRA, I

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Investigation of NiO sub(x)-based contacts on p-GaN von Liday, J, Hotovy, I, Sitter, H, Vogrincic, P, Vincze, A, Vavra, I, Satka, A, Ecke, G, Bonanni, A, Breza, J, Simbrunner, C, Plochberger, B

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Study of Annealed NiO Thin Films Sputtered on Unheated Substrate von Hotovy, Ivan, Liday, Jozef, Spiess, Lothar, Sitter, Helmut, Vogrincic, Peter

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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth von Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Kuzmik, J., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M.

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The innovation facilities of Auger spectrometer with energy modulation on CMA von Tomek, S., Liday, J., Vogrinčič, P.

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InGaAs/InGaP HEMTs: technological optimization and analytical modelling von Kuzmı&#x0301, k, J., Hasenöhrl, S., Kúdela, R., Haščı&#x0301, k, Š., Mozolová, Ž., Lalinský, T., Vogrinčič, P., Breza, J., Škriniarová, J., Fox, A., Kordoš, P.

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High-temperature stable Ir-Al/ n -GaAs Schottky diodes von Lalinský, T., Gregušová, D., Mozolová, Ž., Breza, J., Vogrinčič, P.

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The influence of Ar + and Xe + ion beam incidence angle on the depth resolution in AES von Liday, J, Kliment, V, Vogrinčič, P, Tomek, S

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Auger electron spectroscopy of Au/NiO x contacts on p-GaN annealed in N 2 and O 2 + N 2 ambients von Liday, J., Hotový, I., Sitter, H., Schmidegg, K., Vogrinčič, P., Bonnani, A., Breza, J., Ecke, G., Vávra, I.

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The influence of Ar exp + and Xe exp + ion beam incidence angle on the depth resolution in AES von Liday, J, Kliment, V, Vogrincic, P, Tomek, S

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Auger electron spectroscopy of Au/NiO contacts on p-GaN annealed in N2 and O2+ N2 ambients von Liday, J., Hotový, I., Sitter, H., Schmidegg, K., Vogrinčič, P., Bonnani, A., Breza, J., Ecke, G., Vávra, I.

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