Quick X-Ray Reflectometry in the Simultaneous Multiple Angle-Wavelength Dispersive Mode von Arakawa, E, Voegeli, W, Matsushita, T, Yano, Y F, Hatano, T

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Transmission electron microscope radiation damage of 4H and 6H SiC studied by photoluminescence spectroscopy von Steeds, J.W, Evans, G.A, Danks, L.R, Furkert, S, Voegeli, W, Ismail, M.M, Carosella, F

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Time evolution of the electrical double layer between ionic liquid and Au electrode von Fujii, H., Voegeli, W., Wakabayashi, Y.

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Development of a High-Speed X-Ray Diffraction Method for Observation of Structure Relaxation and Dislocation Creation in III-V Semiconductor Films von Voegeli, W., Arakawa, E., Shirasawa, T., Takahasi, M., Sasaki, T., Matsushita, T.

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Structure of the SiC (0 0 0 1) 3 × 3 reconstruction studied by surface X-ray diffraction von Voegeli, W., Akimoto, K., Aoyama, T., Sumitani, K., Nakatani, S., Tajiri, H., Takahashi, T., Hisada, Y., Mukainakano, S., Zhang, X., Sugiyama, H., Kawata, H.

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24aPS-65 Structures formed by Pb deposition onto high-index Si surfaces von Voegeli, W., Hiroe, T., Shirasawa, T., Takahashi, T.

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Structure of the SiC (0 0 0 1) 3 x 3 reconstruction studied by surface X-ray diffraction von Voegeli, W, Akimoto, K, Aoyama, T, Sumitani, K, Nakatani, S, Tajiri, H, Takahashi, T, Hisada, Y, Mukainakano, S, Zhang, X, Sugiyama, H, Kawata, H

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Structural Study of the Si(553)-Au Surface von Takayama, T., Voegeli, W., Shirasawa, T., Kubo, K., Abe, M., Takahashi, T., Akimoto, K., Sugiyama, H.

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Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy von Ismail, M.M., Carosella, F., Steeds, John W., Evans, A.G., Danks, L. R., Voegeli, W.

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22pGQ-2 Atomic structure of the Si(553)-Au surface von Voegeli, W., Takayama, T., Kubo, K., Abe, M., Shirasawa, T., Takahashi, T., Akimoto, K., Sugiyama, H.

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27aTE-4 Structure of the Si(553)-Au and Si(557)-Au surfaces at room temperature and low temperature von Voegeli, W., Takayama, T., Kubo, K., Abe, M., Shirasawa, T., Takahashi, T., Akimoto, K., Sugiyama, H., Tajiri, H., Sakata, O.

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21aAB-11 表面X線回折法によるSi(111)-5×2-Au表面構造モデルの決定 von 白澤, 徹郎, 山口, 雄大, 高橋, 敏男

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19pCB-5 Si_<1-x>Ge_x上の歪みSi表面のLEEDによる構造解析 von 白澤, 徹郎, 武田, さくら, 高橋, 敏男

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Initial Oxidation of 6H-SiC (0001) (3 x 3)-R30° and 3 x 3 Surfaces Studied by AES and RHEED von Ichimiya, Ayahiko, Aoyama, Tomohiro, Hisada, Yoshiyuki, Voegeli, W., Mukainakano, Shinichi

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Simulation of grain growth in nanocrystalline nickel induced by ion irradiation von Voegeli, Wolfgang, Albe, Karsten, Hahn, Horst

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26pPSB-31 Structures of Pb on high-index Si surfaces von Voegeli, W., Shirasawa, T., Abe, M., Hiroe, T., Takahashi, T., Akimoto, K., Sugiyama, H.

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23aWS-1 Low temperature superstructure formation in gold atomic chains on high-index Si surfaces von Voegeli, W., Takayama, T., Shirasawa, T., Kubo, K., Abe, M., Takahashi, T., Akimoto, K., Sugiyama, H., Tajiri, H., Sakata, O.

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Nazi Family Policy: Securing Mass Loyalty von Voegeli, Wolfgang

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24aPS-66 表面X線回折法によるPb/Si(111)表面の再構成構造とその相転移(24aPS 領域9ポスターセッション,領域9(表面・界面,結晶成長)) von 廣江, 拓, 白澤, 徹郎, 阿部, 誠, 高橋, 敏男, 秋本, 晃一, 杉山, 弘

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19pCB-5 Surface structural analysis of strained Si on Si_<1-x>Ge_x by using LEED von Shirasawa, T., Takahashi, T., Voegeli, W., Yamaguchi, Y.

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