3D GaN nanoarchitecture for field-effect transistors von Fatahilah, Muhammad Fahlesa, Strempel, Klaas, Yu, Feng, Vodapally, Sindhuri, Waag, Andreas, Wasisto, Hutomo Suryo

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Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach von Im, Ki-Sik, Won, Chul-Ho, Vodapally, Sindhuri, Caulmilone, Raphaël, Cristoloveanu, Sorin, Kim, Yong-Tae, Lee, Jung-Hee

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Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET von Vodapally, Sindhuri, Theodorou, Christoforos G., Youngho Bae, Ghibaudo, Gerard, Cristoloveanu, Sorin, Ki-Sik Im, Jung-Hee Lee

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Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET von Vodapally, Sindhuri, Theodorou, Christoforos, Bae, Youngho, Ghibaudo, Gérard, Cristoloveanu, Sorin, Im, Ki-Sik, Lee, Jung-Hee

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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs von Vodapally, Sindhuri, Young In Jang, In Man Kang, In-Tak Cho, Jong-Ho Lee, Youngho Bae, Ghibaudo, Gerard, Cristoloveanu, Sorin, Ki-Sik Im, Jung-Hee Lee

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Capacitance-voltage characterization of Al 2 O 3 /GaN-on-insulator (GaNOI) structures with TMAH surface treatment von Im, Ki-Sik, Kim, Jeong-Gil, Vodapally, Sindhuri, Caulmilone, Raphaël, Cristoloveanu, Sorin, Lee, Jung-Hee

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Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach von Im, Ki-Sik, Sindhuri, Vodapally, Jo, Young-Woo, Son, Dong-Hyeok, Lee, Jae-Hoon, Cristoloveanu, Sorin, Lee, Jung-Hee

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Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer von Im, Ki-Sik, Won, Chul-Ho, Vodapally, Sindhuri, Son, Dong-Hyeok, Jo, Young-Woo, Park, YoHan, Lee, Jae-Hoon, Lee, Jung-Hee

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Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment von Im, Ki-Sik, Kim, Jeong-Gil, Vodapally, Sindhuri, Caulmilone, Raphaël, Cristoloveanu, Sorin, Lee, Jung-Hee

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Performance enhancement of AlGaN/GaN nanochannel omega-FinFET von Im, Ki-Sik, Seo, Jae Hwa, Vodapally, Sindhuri, Kang, In Man, Lee, Jae-Hoon, Cristoloveanu, Sorin, Lee, Jung-Hee

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Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel von Im, Ki-Sik, Kang, Hee-Sung, Kim, Do-Kywn, Vodapally, Sindhuri, Park, YoHan, Lee, Jae-Hoon, Kim, Yong-Tae, Cristoloveanu, Sorin, Lee, Jung-Hee

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