TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation von Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., Vobecky, J.

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Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range von Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., Vobecky, J.

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ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation von Vobecký, J., Hazdra, P., Záhlava, V., Mihaila, A., Berthou, M.

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Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability von Lophitis, N., Antoniou, M., Vemulapati, U., Vobecky, J., Badstuebner, U., Wikstroem, T., Stiasny, T., Rahimo, M., Udrea, F.

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Thin-Wafer Silicon IGBT With Advanced Laser Annealing and Sintering Process von Rahimo, M., Corvasce, C., Vobecky, J., Otani, Y., Huet, K.

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High-power silicon P–i–N diode with cathode shorts: The impact of electron irradiation von PINA, L, VOBECKY, J

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New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop von Lophitis, N., Antoniou, M., Vemulapati, U., Arnold, M., Nistor, I., Vobecky, J., Rahimo, M., Udrea, F.

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Left Atrial Inexcitability in Children With Congenital Lupus-Induced Complete Atrioventricular Block von Abadir, Sylvia, Fournier, Anne, Vobecky, Suzanne J, Rohlicek, Charles V, Romeo, Philippe, Khairy, Paul

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CD5 levels define functionally heterogeneous populations of naïve human CD4+ T cells von Sood, Aditi, Lebel, Marie‐Ève, Dong, Mengqi, Fournier, Marilaine, Vobecky, Suzanne J., Haddad, Élie, Delisle, Jean‐Sébastien, Mandl, Judith N., Vrisekoop, Nienke, Melichar, Heather J.

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Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices von Vobecky, J., Hazdra, P.

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Treatment of Isolated Ventricular Septal Defects in Children: Amplatzer Versus Surgical Closure von Oses, Pierre, MD, Hugues, Nicolas, MD, Dahdah, Nagib, MD, Vobecky, Suzanne J., MD, Miro, Joaquim, MD, Pellerin, Michel, MD, Poirier, Nancy C., MD

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Cardiac resynchronization therapy in congenital heart disease von Khairy, Paul, Fournier, Anne, Thibault, Bernard, Dubuc, Marc, Thérien, Johanne, Vobecky, Suzanne J.

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Molybdenum and low-temperature annealing of a silicon power P–i–N diode von Vobecký, J., Komarnitskyy, V., Záhlava, V.

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The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications von Rahimo, M., Kopta, A., Schlapbach, U., Vobecky, J., Schnell, R., Klaka, S.

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Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities von Perpiñà, X., Jordà, X., Vellvehi, M., Vobecky, J., Mestres, N.

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Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling von Popelka, S., Hazdra, P., Sharma, R., Zahlava, V., Vobecky, J.

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High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects von Vobecky, J., Hazdra, P.

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High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum von Vobecky, J., Hazdra, P.

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TCAD study of DLC coatings for large-area high-power diodes von Reggiani, S., Balestra, L., Gnudi, A., Gnani, E., Baccarani, G., Dobrzynska, J., Vobecký, J., Tosi, C.

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High-power silicon PaiaN diode with cathode shorts: The impact of electron irradiation von Pina, L, Vobecky, J

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