Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm von Barraud, S., Coquand, R., Casse, M., Koyama, M., Hartmann, J.-M, Maffini-Alvaro, V., Comboroure, C., Vizioz, C., Aussenac, F., Faynot, O., Poiroux, T.

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A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration von Fenouillet-Beranger, C., Brunet, L., Batude, P., Brevard, L., Garros, X., Casse, M., Lacord, J., Sklenard, B., Acosta-Alba, P., Kerdiles, S., Tavernier, A., Vizioz, C., Besson, P., Gassilloud, R., Pedini, J.-M., Kanyandekwe, J., Mazen, F., Magalhaes-Lucas, A., Cavalcante, C., Bosch, D., Ribotta, M., Lapras, V., Vinet, M., Andrieu, F., Arcamone, J.

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Top-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies von Barraud, S, Previtali, B, Lapras, V, Coquand, R, Vizioz, C, Hartmann, J-M, Cassé, M

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Single-mode waveguides for GRAVITY von Perraut, K., Jocou, L., Berger, J. P., Chabli, A., Cardin, V., Chamiot-Maitral, G., Delboulbé, A., Eisenhauer, F., Gambérini, Y., Gillessen, S., Guieu, S., Guerrero, J., Haug, M., Hausmann, F., Joulain, F., Kervella, P., Labeye, P., Lacour, S., Lanthermann, C., Lapras, V., Le Bouquin, J. B., Lippa, M., Magnard, Y., Moulin, T., Noël, P., Nolot, A., Patru, F., Perrin, G., Pfuhl, O., Pocas, S., Poulain, S., Scibetta, C., Stadler, E., Templier, R., Ventura, N., Vizioz, C., Amorim, A., Brandner, W., Straubmeier, C.

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Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices von Cipro, R., Baron, T., Martin, M., Moeyaert, J., David, S., Gorbenko, V., Bassani, F., Bogumilowicz, Y., Barnes, J. P., Rochat, N., Loup, V., Vizioz, C., Allouti, N., Chauvin, N., Bao, X. Y., Ye, Z., Pin, J. B., Sanchez, E.

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Three dimensional on 300 mm wafer scale nano imprint lithography processes von Landis, S, Reboud, V, Enot, T, Vizioz, C

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Three dimensional on 300mm wafer scale nano imprint lithography processes von Landis, S., Reboud, V., Enot, T., Vizioz, C.

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Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: 300 K transition to Single Electron Transistor von DESHPANDE, V, BARRAUD, S, TOSTI, L, PREVITALI, B, PERREAU, P, POIROUX, T, SANQUER, M, FAYNOT, O, JEHL, X, WACQUEZ, R, VINET, M, COQUAND, R, ROCHE, B, VOISIN, B, TRIOZON, F, VIZIOZ, C

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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs von Koyama, M., Cassé, M., Coquand, R., Barraud, S., Vizioz, C., Comboroure, C., Perreau, P., Maffini-Alvaro, V., Tabone, C., Tosti, L., Barnola, S., Delaye, V., Aussenac, F., Ghibaudo, G., Iwai, H., Reimbold, G.

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Bonded planar double-metal-gate NMOS transistors down to 10 nm von Vinet, M., Poiroux, T., Widiez, J., Lolivier, J., Previtali, B., Vizioz, C., Guillaumot, B., Le Tiec, Y., Besson, P., Biasse, B., Allain, F., Casse, M., Lafond, D., Hartmann, J.-M., Morand, Y., Chiaroni, J., Deleonibus, S.

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3D nanowire gate-all-around transistors: Specific integration and electrical features von Dupré, C., Ernst, T., Maffini-Alvaro, V., Delaye, V., Hartmann, J.-M., Borel, S., Vizioz, C., Faynot, O., Ghibaudo, G., Deleonibus, S.

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Ultra-dense silicon nanowires: A technology, transport and interfaces challenges insight (invited) von Ernst, T., Barraud, S., Tachi, K., Vizioz, C., Magis, T., Brianceau, P., Hubert, A., Vulliet, N., Hartmann, J.-M., Cassé, M.

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High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs von Le Royer, C., Damlencourt, J.-F., Vincent, B., Romanjek, K., Le Cunff, Y., Grampeix, H., Mazzocchi, V., Carron, V., Némouchi, F., Hartmann, J.-M., Arvet, C., Vizioz, C., Tabone, C., Hutin, L., Batude, P., Vinet, M.

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Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- \kappa Dielectrics, and Metallic Source/Drain von Vinet, M., Poiroux, T., Licitra, C., Widiez, J., Bhandari, J., Previtali, B., Vizioz, C., Lafond, D., Arvet, C., Besson, P., Baud, L., Morand, Y., Rivoire, M., Nemouchi, F., Carron, V., Deleonibus, S.

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Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors von Pauliac-Vaujour, S., Comboroure, C., Vizioz, C., Barnola, S., Brianceau, P., Alvaro, V. Maffini, Dupré, C., Ernst, T.

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Single-mode waveguides for GRAVITY: I. The cryogenic 4-telescope integrated optics beam combiner von Perraut, K., Jocou, L., Berger, J. P., Chabli, A., Cardin, V., Chamiot-Maitral, G., Delboulbé, A., Eisenhauer, F., Gambérini, Y., Gillessen, S., Guieu, S., Guerrero, J., Haug, M., Hausmann, F., Joulain, F., Kervella, P., Labeye, P., Lacour, S., Lanthermann, C., Lapras, V., Le Bouquin, J. B., Lippa, M., Magnard, Y., Moulin, T., Noël, P., Nolot, A., Patru, F., Perrin, G., Pfuhl, O., Pocas, S., Poulain, S., Scibetta, C., Stadler, E., Templier, R., Ventura, N., Vizioz, C., Amorim, A., Brandner, W., Straubmeier, C.

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Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications von Lacord, J., Tcheme Wakam, F., Chalupa, Z., Hartmann, J.-M., Besson, P., Loup, V., Vizioz, C., Brevard, L., Aussenac, F., Mescot, X., Lee, K., Bawedin, M.

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Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities von Deshpande, V., Barraud, S., Jehl, X., Wacquez, R., Vinet, M., Coquand, R., Roche, B., Voisin, B., Triozon, F., Vizioz, C., Tosti, L., Previtali, B., Perreau, P., Poiroux, T., Sanquer, M., Faynot, O.

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Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm von Wacquez, R, Vinet, M, Pierre, M, Roche, B, Jehl, X, Cueto, O, Verduijn, J, Tettamanzi, G C, Rogge, S, Deshpande, V, Previtali, B, Vizioz, C, Pauliac-Vaujour, S, Comboroure, C, Bove, N, Faynot, O, Sanquer, M

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Single-mode waveguides for GRAVITY I. The cryogenic 4-telescope integrated optics beam combiner von Perraut, K, Jocou, L, Berger, J.P, Chabli, A, Cardin, V, Chamiot-Maitral, G, Delboulbe, A, Eisenhauer, F, Gamberini, Y, Gillessen, S, Guieu, S, Guerrero, J, Haug, M, Hausmann, F, Joulain, F, Kervella, P, Labeye, P, Lacour, S, Lanthermann, C, Lapras, V, Le Bouquin, J.B, Lippa, M, Magnard, Y, Moulin, T, Noel, P, Nolot, A, Patru, F, Perrin, G, Pfuhl, O, Pocas, S, Poulain, S, Scibetta, C, Stadler, E, Templier, R, Ventura, N, Vizioz, C, Amorim, A, Brandner, W, Straubmeier, C

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