A review of thermal properties of CVD diamond films von Zhang, Chunyan, Vispute, Ratnakar D., Fu, Kun, Ni, Chaoying

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Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1−xO alloy films von Choopun, S., Vispute, R. D., Yang, W., Sharma, R. P., Venkatesan, T., Shen, H.

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Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectors von Yang, W., Hullavarad, S. S., Nagaraj, B., Takeuchi, I., Sharma, R. P., Venkatesan, T., Vispute, R. D., Shen, H.

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Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1−xO composition spreads von Takeuchi, I., Yang, W., Chang, K.-S., Aronova, M. A., Venkatesan, T., Vispute, R. D., Bendersky, L. A.

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Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films von Yang, W., Vispute, R. D., Choopun, S., Sharma, R. P., Venkatesan, T., Shen, H.

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Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire von Choopun, S., Vispute, R. D., Noch, W., Balsamo, A., Sharma, R. P., Venkatesan, T., Iliadis, A., Look, D. C.

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Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase von Zhang, S. X., Kundaliya, D. C., Yu, W., Dhar, S., Young, S. Y., Salamanca-Riba, L. G., Ogale, S. B., Vispute, R. D., Venkatesan, T.

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Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN von Motayed, Abhishek, Bathe, Ravi, Wood, Mark C., Diouf, Ousmane S., Vispute, R. D., Mohammad, S. Noor

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Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices von Vispute, R. D., Talyansky, V., Choopun, S., Sharma, R. P., Venkatesan, T., He, M., Tang, X., Halpern, J. B., Spencer, M. G., Li, Y. X., Salamanca-Riba, L. G., Iliadis, A. A., Jones, K. A.

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Observation of resonant tunneling action in ZnO/Zn0.8Mg0.2O devices von Krishnamoorthy, Soumya, Iliadis, Agis A, Inumpudi, Aravind, Choopun, Supab, Vispute, Ratnakar D, Venkatesan, Tirumalai

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High mobility crystalline silicon film growth below 600 °C from an Au-Si eutectic melt for TFTs von Rajbhandari, Pravakar Prasad, Dhakal, Tara P., Vispute, Ratnakar D., Chaudhari, Ashok

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Compositional origin of surface roughness variations in air-annealed ZnO single crystals von Elizabeth Pugel, D., Vispute, R.D., Hullavarad, S.S., Venkatesan, T., Varughese, B.

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Extremely highly textured MgO [111] crystalline films on soda-lime glass by E-beam von Chaudhari, Ashok, Vispute, R.D., Efstathiadis, Harry

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Highly textured silicon [111] crystalline thin-film on buffered soda-lime glass by e-beam evaporation von McMahon, Shane, Chaudhari, Ashok, Vispute, R.D., Zhao, Zhouying, Efstathiadis, Harry

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High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III–V nitrides von Vispute, R. D., Talyansky, V., Trajanovic, Z., Choopun, S., Downes, M., Sharma, R. P., Venkatesan, T., Woods, M. C., Lareau, R. T., Jones, K. A., Iliadis, A. A.

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Crystalline Al2O3 on buffered soda-lime glass by e-beam von Chaudhari, Ashok, Vispute, R.D., Murray, Thomas M., Efstathiadis, Harry

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Realization of Mg ( x = 0.15 ) Zn ( 1 − x = 0.85 ) O -based metal-semiconductor-metal UV detector on quartz and sapphire von Hullavarad, S. S., Dhar, S., Varughese, B., Takeuchi, I., Venkatesan, T., Vispute, R. D.

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Growth of GaN films on PLD-deposited TaC substrates von Kirchner, K.W., Derenge, M.A., Zheleva, T.S., Vispute, R.D., Jones, K.A.

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High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition von Vispute, R. D., Wu, Hong, Narayan, J.

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Homo- and hetero-epitaxial growth of hexagonal and cubic MgxZn1−x O alloy thin films by pulsed laser deposition technique von Hullavarad, S S, Hullavarad, N V, Pugel, D E, Dhar, S, Takeuchi, I, Venkatesan, T, Vispute, R D

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