Direct Observation of Lateral Carrier Diffusion in Ridge Waveguide InGaNAs Lasers von Adolfsson, G., Shumin Wang, Sadeghi, M., Bengtsson, J., Larsson, A., Jun Jun Lim, Vilokkinen, V., Melanen, P.

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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3- \mu} Double Quantum-Well GaInNAs-GaAs Lasers von Adolfsson, G., Shumin Wang, Sadeghi, M., Bengtsson, J., Larsson, A., Jun Jun Lim, Vilokkinen, V., Melanen, P.

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Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power von Saarinen, M., Vilokkinen, V., Dumitrescu, M., Pessa, M.

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Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth von Guina, M., Orsila, S., Dumitrescu, M., Saarinen, M., Sipila, P., Vilokkinen, V., Roycroft, B., Uusimaa, P., Toivonen, M., Pessa, M.

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Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy von Saarinen, M, Toivonen, M, Xiang, N, Vilokkinen, V, Pessa, M

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Resonant cavity light-emitting diodes at 660 and 880 nm von Vilokkinen, V, Sipilä, P, Melanen, P, Saarinen, M, Orsila, S, Dumitrescu, M, Savolainen, P, Toivonen, M, Pessa, M

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Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy von Saarinen, M, Xiang, N, Vilokkinen, V, Melanen, P, Orsila, S, Uusimaa, P, Savolainen, P, Toivonen, M, Pessa, M

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1.3- \mu m Two-Section DBR Lasers Based on Surface Defined Gratings for High-Speed Telecommunication von Afzal, S, Schnabel, F, Scholz, W, Reithmaier, J P, Gready, D, Eisenstein, G, Melanen, P, Vilokkinen, V, Montrosset, I, Vallone, M

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Resonant cavity light-emitting diodes grown by solid source MBE von Orsila, S, Leinonen, T, Uusimaa, P, Saarinen, M, Guina, M, Sipilä, P, Vilokkinen, V, Melanen, P, Dumitrescu, M, Pessa, M

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Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy von Dumitrescu, M., Toikkanen, L., Sipilä, P., Vilokkinen, V., Melanen, P., Saarinen, M., Orsila, S., Savolainen, P., Toivonen, M., Pessa, M.

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Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy von PESSA, M, TOIVONEN, M, SAVOLAINEN, P, ORSILA, S, SIPILÄ, P, SAARINEN, M, MELANEN, P, VILOKKINEN, V, UUSIMAA, P, HAAPAMAA, J

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Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes von Toivonen, M, Savolainen, P, Orsila, S, Vilokkinen, V, Pessa, M, Corvini, P, Fang, F, Nabiev, R.F, Jansen, M

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AlGalnAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solid source molecular beam epitaxy von Savolainen, P, Toivonen, M, Orsila, S, Saarinen, M, Melanen, P, Vilokkinen, V, Dumitrescu, M, Panarello, T, Pessa, M

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Reliability analysis of AlGaInAs lasers at 1.3 µm von Vilokkinen, V, Savolainen, P, Sipilä, P

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Reliability analysis of AlGaInAs lasers at 1.3 µm von Vilokkinen, V., Savolainen, P., Sipilä, P.

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Reliability analysis of AlGaInAs lasers at 1.3 mu m von Vilokkinen, V, Savolainen, P, Sipilae, P

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Direct Observation of Lateral Carrier Diffusion in Ridge Waveguide InGaNAs Lasers von Adolfsson, G, Wang, Shumin, Sadeghi, M, Bengtsson, J, Larsson, A, Lim, Jun Jun, Vilokkinen, V, Melanen, P

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AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy von Savolainen, P., Toivonen, M., Orsila, S., Saarinen, M., Melanen, P., Vilokkinen, V., Dumitrescu, M., Panarello, T., Pessa, M.

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Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-[mu{hbox {m}}] Double Quantum-Well GaInNAs-GaAs Lasers von Adolfsson, G, Wang, Shumin, Sadeghi, M, Bengtsson, J, Larsson, A, Lim, Jun Jun, Vilokkinen, V, Melanen, P

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Red Wavelength Range Microcavity Emitters von Dumitrescu, M., Saarinen, M., Xiang, Ning, Guina, M., Vilokkinen, V., Pessa, M.

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