Study of the correlation parameters of the surface structure of disordered semiconductors by the two-dimensional DFA and average mutual information methods von Alpatov, A. V., Vikhrov, S. P., Rybina, N. V.

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Study of Deep Levels in a HIT Solar Cell von Vikhrov, S. P., Vishnyakov, N. V., Gudzev, V. V., Ermachikhin, A. V., Shilina, D. V., Litvinov, V. G., Maslov, A. D., Mishustin, V. G., Terukov, E. I., Titov, A. S.

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Revealing the surface interface correlations in a-Si:H films by 2D detrended fluctuation analysis von Alpatov, A. V., Vikhrov, S. P., Grishankina, N. V.

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On a combined approach to studying the correlation parameters of self-organizing structures von Alpatov, A. V., Vikhrov, S. P., Vishnyakov, N. V., Mursalov, S. M., Rybin, N. B., Rybina, N. V.

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Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase von Alpatov, A. V., Vikhrov, S. P., Kazanskii, A. G., Lyaskovskii, V. L., Rybin, N. B., Rybina, N. V., Forsh, P. A.

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Determination of the degree of ordering of materials’ structure by calculating the information-correlation characteristics von Vikhrov, S. P., Avacheva, T. G., Bodyagin, N. V., Grishankina, N. V., Avachev, A. P.

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Phase transitions in thin [Ge.sub.2][Sb.sub.2][Te.sub.5] chalcogenide films according to Raman spectroscopy data von Avachev, A.P, Vikhrov, S.P, Vishnyakov, N.V, Kozyukhin, S.A, Mitrofanov, K.V, Terukov, E.I

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Electronic conductivity of (Gese 3.5) 100 − xBi x and (GeS 3.5) 100 − xBi x in solid and liquid states von Vikhrov, S.P., Ampilogov, V.N.

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Salient features of charge transport in solid and liquid disordered states of the Ge 16Te 80X 4 system von Vikhrov, S.P., Ampilogov, V.N., Mal'chenko, S.I.

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Electronic conductivity of (Gese3.5)100 − xBix and (GeS3.5)100 − xBix in solid and liquid states von Vikhrov, S.P., Ampilogov, V.N.

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Salient features of charge transport in solid and liquid disordered states of the Ge16Te80X4 system von Vikhrov, S.P., Ampilogov, V.N., Mal'chenko, S.I.

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METHOD FOR PRODUCING OHMIC CONTACTS IN THIN-FILM DEVICES BUILT AROUND AMORPHOUS HYDROGENATED SEMICONDUCTORS von POPOV A.A, MASLOV A.A, VIKHROV S.P, VISHNJAKOV N.V, MISHUSTIN V.G

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Collective effects in the a-Si:H growth process von Aivazov, A.A., Bodyagin, N.V., Virhrov, S.P., Petrov, S.V.

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