Towards high quality CVD graphene growth and transfer von Deokar, G., Avila, J., Razado-Colambo, I., Codron, J.-L., Boyaval, C., Galopin, E., Asensio, M.-C., Vignaud, D.

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Synthesis and characterization of MoS2 nanosheets von Deokar, G, Vignaud, D, Arenal, R, Louette, P, Colomer, J-F

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Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction von Razado-Colambo, I., Avila, J., Vignaud, D., Godey, S., Wallart, X., Woodruff, D. P., Asensio, M. C.

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Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers von Benzarti, Z., Sekrafi, T., Khalfallah, A., Bougrioua, Z., Vignaud, D., Evaristo, M., Cavaleiro, A.

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NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles von Razado-Colambo, I., Avila, J., Nys, J.-P., Chen, C., Wallart, X., Asensio, M.-C., Vignaud, D.

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Solar Neutrinos and the Borexino experiment von Vignaud, D

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Graphene growth by molecular beam epitaxy using a solid carbon source von Moreau, E., Ferrer, F. J., Vignaud, D., Godey, S., Wallart, X.

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Understanding the growth mechanism of graphene on Ge/Si(001) surfaces von Dabrowski, J., Lippert, G., Avila, J., Baringhaus, J., Colambo, I., Dedkov, Yu S., Herziger, F., Lupina, G., Maultzsch, J., Schaffus, T., Schroeder, T., Kot, M., Tegenkamp, C., Vignaud, D., Asensio, M.-C.

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Graphene growth by molecular beam epitaxy on the carbon-face of SiC von Moreau, E., Godey, S., Ferrer, F. J., Vignaud, D., Wallart, X., Avila, J., Asensio, M. C., Bournel, F., Gallet, J.-J.

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Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor von Nan Meng, Fernandez, J F, Vignaud, D, Dambrine, G, Happy, H

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Correction: Transport mechanisms in a puckered graphene-on-lattice von Xu, T, Díaz Álvarez, A, Wei, W, Eschimese, D, Brillard, C, Eliet, S, Lancry, O, Galopin, E, Vaurette, F, Berthe, M, Desremes, D, Wei, B, Xu, J, Lampin, J F, Pallecchi, E, Happy, H, Vignaud, D, Grandidier, B

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Transport mechanisms in a puckered graphene-on-lattice von Xu, T, Díaz Álvarez, A, Wei, W, Eschimese, D, Eliet, S, Lancry, O, Galopin, E, Vaurette, F, Berthe, M, Desremes, D, Wei, B, Xu, J, Lampin, J. F, Pallecchi, E, Happy, H, Vignaud, D, Grandidier, B

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Large area growth of vertically aligned luminescent MoS 2 nanosheets von Deokar, G, Rajput, N S, Vancsó, P, Ravaux, F, Jouiad, M, Vignaud, D, Cecchet, F, Colomer, J-F

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High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates von Desplanque, L., Vignaud, D., Wallart, X.

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Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy von Ferrer, F. J., Moreau, E., Vignaud, D., Deresmes, D., Godey, S., Wallart, X.

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GALLEX solar neutrino observations: results for GALLEX IV von Hampel, W., Handt, J., Heusser, G., Kiko, J., Kirsten, T., Laubenstein, M., Pernicka, E., Rau, W., Wojcik, M., Zakharov, Y., Ammon, R.v., Ebert, K.H., Fritsch, T., Heidt, D., Henrich, E., Stielglitz, L., Weirich, F., Balata, M., Sann, M., Hartmann, F.X., Bellotti, E., Cattadori, C., Cremonesi, O., Ferrari, N., Fiorini, E., Zanotti, L., Altmann, M., Feilitzsch, F.v., Mößbauer, R., Wänninger, S., Berthomieu, G., Schatzman, E., Carmi, I., Dostrovsky, I., Bacci, C., Belli, P., Bernabei, R., d'Angelo, S., Paoluzi, L., Cribier, M., Rich, J., Spiro, M., Tao, C., Vignaud, D., Boger, J., Hahn, R.L., Rowley, J.K., Stoenner, R.W., Weneser, J.

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Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux von Ferrer, F J, Moreau, E, Vignaud, D, Godey, S, Wallart, X

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Performances and limitations of InAs∕InAlAs metamorphic heterostructures on InP for high mobility devices von Wallart, X., Lastennet, J., Vignaud, D., Mollot, F.

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Two-photon absorption in InP substrates in the 1.55μm range von Vignaud, D., Lampin, J. F., Mollot, F.

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Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurement von Vignaud, D., Mollot, F.

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