Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor von Vertiatchikh, A.V., Eastman, L.F., Schaff, W.J., Prunty, T.

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Electron drift velocity in AlGaN/GaN channel at high electric fields von Ardaravičius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

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Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance von Vertiatchikh, A.V., Eastman, L.F.

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Piezoresistive and piezoelectric effects in GaN von Tilak, V., Vertiatchikh, A., Jiang, J., Reeves, N., Dasgupta, S.

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Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown von Vertiatchikh, Alexey, Cha, Ho Young, Sandvik, Peter M., Soloviev, Stanislav I., Dovidenko, K.

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High-power monolithic AlGaN/GaN HEMT oscillator von Kaper, V.S., Tilak, V., Hyungtak Kim, Vertiatchikh, A.V., Thompson, R.M., Prunty, T.R., Eastman, L.F., Shealy, J.R.

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Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses von Zhang, A.P., Kaminsky, E.B., Allen, A.F., Hedrick, J.W., Vertiatchikh, A., Eastman, L.F.

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Effect of drain-to-source spacing of AlGaN/GaN transistor on frequency response and breakdown characteristics von Vertiatchikh, A.V., Eastman, L.F.

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Hot-electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs von Matulionis, A., Liberis, J., Ramonas, M., Matulionienė, I., Eastman, L. F., Vertiatchikh, A., Chen, X., Sun, Y.-J.

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Self-heating and microwave noise in AlGaN/GaN von Ardaravicius, L, Liberis, J, Matulionis, A, Eastman, L F, Shealy, J R, Vertiatchikh, A

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Hot electron induced degradation of undoped AlGaN/GaN HFETs von Kim, Hyungtak, Vertiatchikh, Alexei, Thompson, Richard M., Tilak, Vinayak, Prunty, Thomas R., Shealy, James R., Eastman, Lester F.

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Frequency and breakdown properties of AlGaN/GaN HEMTs von Vertiatchikh, A., Schaff, W.J., Eastman, L.F., Matulionis, A.

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Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction von Vitusevich, S.A., Danylyuk, S.V., Klein, N., Petrychuk, M.V., Belyaev, A.E., Vertiatchikh, A., Eastman, L.F.

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LOW FREQUENCY NOISE PARAMETERS IN AN AlGaN/GaN HETEROSTRUCTURE WITH 33% AND 75% Al MOLE FRACTION von VITUSEVICH, S.A., DANYLYUK, S.V., KLEIN, N., PETRYCHUK, M.V., BELYAEV, A.E., VERTIATCHIKH, A., EASTMAN, L.F.

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Effects of g-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S A, Klein, N, Belyaev, A E, Danylyuk, S V, Petrychuk, M V, Konakova, R V, Kurakin, A M, Rengevich, A E, Avksentyev, A Y, Danilchenko, B A, Tilak, V, Smart, J, Vertiatchikh, A, Eastman, L F

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Effects of g-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S A, Klein, N, Belyaev, A E, Danylyuk, S V, Petrychuk, M V, Konakova, R V, Kurakin, A M, Rengevich, A E, Avksentyev, A Y, Danilchenko, B A, Tilak, V, Smart, J, Vertiatchikh, A, Eastman, L F

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Two-Dimensional Electron Dynamics in GaN/AlGaN Heterostructures von Vitusevich, S.A., Danylyuk, S.V., Klein, N., Petrychuk, M.V., Avksentyev, A.Yu, Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L.F.

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Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis von Matulionis, A., Liberis, J., Matulionienė, I., Ramonas, M., Eastman, L. F., Shealy, J. R., Tilak, V., Vertiatchikh, A.

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Hot electron effects on undoped AlGaN/GaN high electron mobility transistors von Kim, H., Vertiatchikh, A., Tilak, V., Thompson, R.M., Prunty, T., Shealy, J.R., Eastman, L.F.

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High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation von Matocha, Kevin, Casady, Jeff B., Vertiatchikh, Alexey, Kaminsky, Ed

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