Precise ion energy control with tailored waveform biasing for atomic scale processing von Faraz, Tahsin, Verstappen, Yuri G. P., Verheijen, Marcel A., Chittock, Nicholas J., Lopez, Javier Escandon, Heijdra, Erik, van Gennip, Wouter J. H., Kessels, Wilhelmus M. M., Mackus, Adriaan J. M.

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Surface prefunctionalization of SiO2 to modify the etch per cycle during plasma-assisted atomic layer etching von Gasvoda, Ryan J., Verstappen, Yuri G. P., Wang, Scott, Hudson, Eric A., Agarwal, Sumit

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