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    0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity

    0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity von Ada-Hanifi, M., Bonis, M., Verove, Ch, Basso, M.T., Revil, N., Haond, M., Lecontellec, M.

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