FEATURES OF STRENGTHENING BUILDINGS WITH THE LATEST REINFORCING MATERIALS von Horokhova, A.V., Rott, N.O., Verner, I.V., Dmytriiev, A.V.

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Defect and majority carrier distribution in silicon resulting from Ar +Si +, B + and As + ion implantation and annealing von Gerasimenko, N.N., Mazhirin, A.P., Nagdaev, E.N., Verner, I.V.

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Distribution of impurities implanted in InSb and InAs before and after annealing von Gerasimenko, N.N., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I., Verner, I.V.

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Evolution of point defects during swirl formation in semiconductors von Verner, I.V., Gerasimenko, N.N., Zhang, Y., Corbett, J.W.

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Peculiarities of implantation of silicon with intensive beams of B/sup +/ and BF/sub 2//sup +/ ions von Troitski, V.Yu, Gerasimenko, N.N., Verner, I.V.

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SUSPENSION FOR ANTIADHESION TREATMENT OF ETHYLENE-VINYL-ACETATE COPOLYMER GRANULES von VERNER ORGANO,SU, GILIMYANOV F.G.,SU, VOLFGANG SHTARK,SU, KUZNETSOV V.I.,SU, KONOVAL I.V.,SU, MANFRED GEBAUER,SU

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