β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer von Yakovlev, Nikita N., Almaev, Aleksei V., Kushnarev, Bogdan O., Verkholetov, Maksim G., Poliakov, Maksim V., Zinovev, Mikhail M.

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High Oxygen Sensitivity of TiO2 Thin Films Deposited by ALD von Almaev, Aleksei V., Yakovlev, Nikita N., Almaev, Dmitry A., Verkholetov, Maksim G., Rudakov, Grigory A., Litvinova, Kristina I.

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Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity von Prudaev, Ilya A., Vainshtein, Sergey N., Verkholetov, Maksim G., Oleinik, Vladimir L., Kopyev, Viktor V.

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β-Ga[sub.2]O[sub.3] Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer von Yakovlev, Nikita N, Almaev, Aleksei V, Kushnarev, Bogdan O, Verkholetov, Maksim G, Poliakov, Maksim V, Zinovev, Mikhail M

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The Mechanism of Superfast Switching of Avalanche -Diodes Based on GaAs Doped With Cr and Fe von Prudaev, Ilya A., Oleinik, Vladimir L., Smirnova, Tatyana E., Kopyev, Viktor V., Verkholetov, Maksim G., Balzovsky, Evgeny V., Tolbanov, Oleg P.

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High Oxygen Sensitivity of TiO[sub.2] Thin Films Deposited by ALD von Almaev, Aleksei V, Yakovlev, Nikita N, Almaev, Dmitry A, Verkholetov, Maksim G, Rudakov, Grigory A, Litvinova, Kristina I

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